MMBF0201NL, MVMBF0201NL MOSFET N-Channel, SOT-23 300 mA, 20 V www.onsemi.com 300 mAMPS 20 VOLTS These miniature surface mount MOSFETs low R assure DS(on) R = 1 DS(on) minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are NChannel dc dc converters, power management in portable and 3 batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features Low R Provides Higher Efficiency and Extends Battery Life DS(on) 1 Miniature SOT23 Surface Mount Package Saves Board Space MVMBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 2 Qualified and PPAP Capable* These Devices are PbFree and are RoHS Compliant MARKING DIAGRAM AND PIN ASSIGNMENT MAXIMUM RATINGS (T = 25C unless otherwise noted) J 3 3 Rating Symbol Value Unit Drain DraintoSource Voltage V 20 Vdc DSS 1 N1 M GatetoSource Voltage Continuous V 20 Vdc 2 GS Drain Current mAdc SOT23 Continuous T = 25C I 300 A D 1 2 CASE 318 Continuous T = 70C I 240 A D Gate Source STYLE 21 Pulsed Drain Current (t 10 s) I 750 p DM Total Power Dissipation T = 25C P 225 mW A D N1 = Specific Device Code Operating and Storage Temperature Range T , T 55 to 150 C J stg M = Date Code* Thermal Resistance, JunctiontoAmbient R 556 C/W = PbFree Package JA Maximum Lead Temperature for Soldering T 260 C L (Note: Microdot may be in either location) Purposes, 1/8 from case for 10 seconds *Date Code orientation and/or overbar may Stresses exceeding those listed in the Maximum Ratings table may damage the vary depending upon manufacturing location. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping MMBF0201NLT1G SOT23 3000 / Tape & (PbFree) Reel MVMBF0201NLT1G* SOT23 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1995 1 Publication Order Number: May, 2019 Rev. 6 MMBF0201NLT1/DMMBF0201NL, MVMBF0201NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 20 Vdc (BR)DSS (V = 0 Vdc, I = 10 A) GS D Zero Gate Voltage Drain Current I Adc DSS (V = 16 Vdc, V = 0 Vdc) 1.0 DS GS (V = 16 Vdc, V = 0 Vdc, T = 125C) 10 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 1) Gate Threshold Voltage V 1.0 1.7 2.4 Vdc GS(th) (V = V , I = 250 Adc) DS GS D Static DraintoSource OnResistance r DS(on) (V = 10 Vdc, I = 300 mAdc) 0.75 1.0 GS D (V = 4.5 Vdc, I = 100 mAdc) 1.0 1.4 GS D Forward Transconductance (V = 10 Vdc, I = 200 mAdc) g 450 mMhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance (V = 5.0 V) C 45 pF DS iss Output Capacitance (V = 5.0 V) C 25 DS oss Transfer Capacitance (V = 5.0 V) C 5.0 DG rss SWITCHING CHARACTERISTICS (Note 2) TurnOn Delay Time t 2.5 ns d(on) Rise Time t 2.5 r (V = 15 Vdc, I = 300 mAdc, DD D R = 50 ) L TurnOff Delay Time t 15 d(off) Fall Time t 0.8 f Gate Charge (See Figure 5) Q 1400 pC T SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current I 0.3 A S Pulsed Current I 0.75 SM Forward Voltage (Note 2) V 0.85 V SD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2