SFT1345 Power MOSFET 100V, 275m , 11A, Single P-Channel This P-Channel Power MOSFET is produced using ON Semiconductors www.onsemi.com trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features V R (on) Max I DSS DS D Max Low On-Resistance 275m 10V 4V drive 100V 315m 4.5V 11A 100% Avalanche Tested 330m 4V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance ELECTRICAL CONNECTION P-Channel Typical Applications 2,4 Reverse Battery Protection Load Switch SPECIFICATIONS 1:Gate 2:Drain ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) 1 3:Source Parameter SymbolValue Unit 4:Drain Drain to Source Voltage V 100 V DSS Gate to Source Voltage V 20 V 3 GSS Drain Current (DC) I 11 A D PACKING TYPE : TL MARKING Drain Current I 44 A DP PW 10 s, duty cycle 1% 1.0 W T1345 Power Dissipation P D Tc=25 C 35 W LOT No. Junction Temperature Tj 150 C TL Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage 4 the device. If any of these limits are exceeded, device functionality should not 4 be assumed, damage may occur and reliability may be affected. 2 1 THERMAL RESISTANCE RATINGS 3 1 Parameter SymbolValue Unit IPAK(TP) DPAK(TP-FA) 2 3 Junction to Case Steady State R 3.57 JC C/W Junction to Ambient (Note 2) R 125 JA ORDERING INFORMATION Note 2 : Insertion mounted See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : February 2016 - Rev. 1 SFT1345/D SFT1345 ELECTRICAL CHARACTERISTICS at Ta 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I = 1mA, V=0V 100 V BR DSS D GS Zero-Gate Voltage Drain Current I V = 100V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V = 16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V = 10V, I = 1mA 1.2 2.6 V GS DS D Forward Transconductance g V = 10V, I = 5.5A 8.5 S FS DS D R (on)1 I = 5.5A, V = 10V 210 275m DS D GS Static Drain to Source On-State 225 315 R (on)2 I = 3A, V = 4.5V m DS D GS Resistance R (on)3 I = 3A, V = 4V 235 330 m DS D GS Input Capacitance Ciss 1020 pF Output Capacitance Coss 72 pF V = 20V, f=1MHz DS Reverse Transfer Capacitance Crss 43 pF Turn-ON Delay Time t (on) 9.5 ns d Rise Time t 25 ns r See specified Test Circuit Turn-OFF Delay Time 105 ns t (off) d Fall Time 55 ns t f Total Gate Charge Qg 21 nC Gate to Source Charge Qgs 3.6 nC V = 50V, V = 10V, I = 11A DS GS D Gate to Drain Miller Charge Qgd 4.5 nC Forward Diode Voltage V SD I = 11A, V=0V 0.93 1.5 V S GS Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V = --50V V IN DD 0V --10V I =--5.5A D V IN R =9.1 L D V OUT PW=10s D.C. 1% G SFT1345 P.G 50 S www.onsemi.com 2