SFT1431-W ON Semiconductor

Ordering number : ENA1624B SFT1431 Power MOSFET SFT1431 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 35 V BR DSS D GS Zero-Gate Voltage Drain Current I V =35V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=5.5A 5 S FS DS D R(on)1 I =5.5A, V=10V 19 25m DS D GS Static Drain to Source On-State Resistance R(on)2 I =3A, V=4.5V 28 39.5m DS D GS R(on)3 I =3A, V=4V 35 49m DS D GS Input Capacitance Ciss 960 pF Output Capacitance Coss V =20V, f=1MHz 130 pF DS Reverse Transfer Capacitance Crss 84 pF Turn-ON Delay Time t (on) 12 ns d Rise Time t 40 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 60 ns d Fall Time t 36 ns f Total Gate Charge Qg 17.3 nC Gate to Source Charge Qgs V =20V, V =10V, I =11A 3.2 nC DS GS D Gate to Drain Miller Charge Qgd 3.6 nC Forward Diode Voltage V I =11A, V=0V 0.88 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =15V DD IN 10V 0V I =5.5A D V IN R =2.7 L D V OUT PW=10s D.C.1% G SFT1431 P.G 50 S No.A1624-2/6