Ordering number : ENA1742A SFT1446 N-Channel Power MOSFET SFT1446 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =10A 7.0 S DS D R (on)1 I =10A, V =10V 39 51 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =5A, V =4.5V 54 76 m DS D GS R (on)3 I =5A, V =4V 62 87 m DS D GS Input Capacitance Ciss 750 pF Output Capacitance Coss V =20V, f=1MHz 59 pF DS Reverse Transfer Capacitance Crss 47 pF Turn-ON Delay Time t (on) 8.5 ns d Rise Time t 31 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 60 ns d Fall Time t 48 ns f Total Gate Charge Qg 16 nC Gate-to-Source Charge Qgs V =30V, V =10V, I =14A 3.3 nC DS GS D Gate-to-Drain Miller Charge Qgd 3.6 nC Diode Forward Voltage V I =20A, V =0V 1.01 1.2 V SD S GS Switching Time Test Circuit V V =30V DD IN 10V 0V I =10A D V IN R =3 L D V OUT PW=10s D.C.1% G SFT1446 P.G 50 S Ordering Information Device Package Shipping memo SFT1446-H TP 500pcs./bag Pb Free and Halogen Free SFT1446-TL-H TP-FA 700pcs./reel I -- V I -- V D DS D GS 20 30 Tc=25C V =10V DS 18 Single pulse Single pulse 25 16 14 20 12 10 15 8 10 6 4 5 2 0 00 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Drain-to-Source Voltage, V -- V IT15539 Gate-to-Source Voltage, V -- V IT15540 DS GS No. A1742-2/9 V =2.5V GS 3.0V 3.5V 4.0V 4.5V 6.0V 25C 25C 8.0V 75C 10.0V --25C Tc=75C Tc= --25C 16.0V Drain Current, I -- A D Drain Current, I -- A D