X-On Electronics has gained recognition as a prominent supplier of RUF020N02TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUF020N02TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RUF020N02TL ROHM

RUF020N02TL electronic component of ROHM
RUF020N02TL ROHM
RUF020N02TL MOSFETs
RUF020N02TL  Semiconductors

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See Product Specifications
Part No. RUF020N02TL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Trans MOSFET N-CH 20V 2A
Datasheet: RUF020N02TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5665 ea
Line Total: USD 0.57 
Availability - 2663
Ship by Mon. 13 Jan to Wed. 15 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2663
Ship by Mon. 13 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5665
10 : USD 0.3586
100 : USD 0.2365
500 : USD 0.187
1000 : USD 0.1705
3000 : USD 0.1386
9000 : USD 0.1287
24000 : USD 0.1254
45000 : USD 0.1232

52076
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 76
Multiples : 1
76 : USD 0.858
122 : USD 0.5314
191 : USD 0.3397
200 : USD 0.338
500 : USD 0.2275
1000 : USD 0.2162
3000 : USD 0.1967
6000 : USD 0.1804
12000 : USD 0.1707
24000 : USD 0.1566

20273
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 317
Multiples : 1
317 : USD 0.322
500 : USD 0.3103
1000 : USD 0.3002
2500 : USD 0.2913
5000 : USD 0.2835
10000 : USD 0.2765

56
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 58
Multiples : 1
58 : USD 1.9178

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Package / Case
Packaging
Technology
Number of Channels
Series
Transistor Type
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the RUF020N02TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUF020N02TL and other electronic components in the MOSFETs category and beyond.

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RUF020N02 Datasheet Nch 20V 2A Middle Power MOSFET llOutline SOT-323T V 20V DSS R (Max.) 105m DS(on) TUMT3 I 2A D P 0.8W D llInner circuit llFeatures 1) Low on - resistance. 2) 1.5V drive 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT3). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking XK llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 2 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 10 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20151030 - Rev.001 RUF020N02 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2A - 75 105 GS D V = 2.5V, I = 2A - 95 135 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 1A - 130 185 GS D V = 1.5V, I = 0.4A - 170 240 GS D R Gate resistance f = 1MHz, open drain - 24 - G Forward Transfer *4 Y V = 10V, I = 2A 1.8 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20151030 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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