X-On Electronics has gained recognition as a prominent supplier of RUF020N02TL MOSFET across the USA, India, Europe, Australia, and various other global locations. RUF020N02TL MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RUF020N02TL ROHM

RUF020N02TL electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RUF020N02TL
Manufacturer: ROHM
Category: MOSFET
Description: ROHM Semiconductor MOSFET Trans MOSFET N-CH 20V 2A
Datasheet: RUF020N02TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3887 ea
Line Total: USD 0.39

Availability - 6580
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6580
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 0.3887
10 : USD 0.2978
100 : USD 0.2242
500 : USD 0.1875
1000 : USD 0.1564
3000 : USD 0.1311
9000 : USD 0.1299
45000 : USD 0.1288

52852
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 207
Multiples : 1
207 : USD 0.1967
500 : USD 0.1722
1000 : USD 0.1642
2000 : USD 0.1625
3000 : USD 0.157
6000 : USD 0.1505
12000 : USD 0.143

23280
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 443
Multiples : 1
443 : USD 0.3403
500 : USD 0.328
1000 : USD 0.3173
2500 : USD 0.308
5000 : USD 0.2996
10000 : USD 0.2924

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Series
Transistor Type
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the RUF020N02TL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUF020N02TL and other electronic components in the MOSFET category and beyond.

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RUF020N02 Datasheet Nch 20V 2A Middle Power MOSFET llOutline SOT-323T V 20V DSS R (Max.) 105m DS(on) TUMT3 I 2A D P 0.8W D llInner circuit llFeatures 1) Low on - resistance. 2) 1.5V drive 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT3). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking XK llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 2 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 10 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20151030 - Rev.001 RUF020N02 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2A - 75 105 GS D V = 2.5V, I = 2A - 95 135 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 1A - 130 185 GS D V = 1.5V, I = 0.4A - 170 240 GS D R Gate resistance f = 1MHz, open drain - 24 - G Forward Transfer *4 Y V = 10V, I = 2A 1.8 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20151030 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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