RUM003N02 Transistor 1.8V Drive Nch MOSFET RUM003N02 z Dimensions (Unit : mm) z Structure Silicon N-channel VMT3 MOSFET z Applications Switching (1)Base(IN)(Gate) z Features (2)Emitter(GND)(Source) 1) Low on-resistance. (3)Collector(OUT)(Drain) Abbreviated symbol : QT 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. z Packaging specifications z Equivalent circuit Drain Package Taping Code T2L Type Basic ordering unit 8000 (pieces) RUM003N02 Gate 2 z Absolute maximum ratings (Ta=25C) 1 Parameter Symbol Limits Unit Source 1 ESD PROTECTION DIODE Drain-source voltage VDSS 20 V 2 BODY DIODE Gate-source voltage VGSS 8 V Continuous ID 300 mA Drain current 1 Pulsed IDP 600 mA 2 Total power dissipation PD 150 mW Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended land z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 833 C / W Each terminal mounted on a recommended land Rev.B 1/3 RUM003N02 Transistor z Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Conditions Parameter IGSS 10 AVGS=8V, VDS=0V Gate-source leakage Drain-source breakdown voltage V(BR)DSS 20 V ID=1mA, VGS=0V Zero gate voltage drain current IDSS 1.0 A VDS=20V, VGS=0V Gate threshold voltage VGS(th) 0.3 1.0 V VDS=10V, ID=1mA 0.7 1.0 ID=300mA, VGS=4.0V Static drain-source on-state RDS(on) 0.8 1.2 ID=300mA, VGS=2.5V resistance 1.0 1.4 ID=300mA, VGS=1.8V Yfs 400 ms ID=300mA, VDS=10V Forward transfer admittance Input capacitance Ciss 25 pF VDS=10V Output capacitance Coss 10 pF VGS=0V Crss 10 pF Reverse transfer capacitance f=1MHz td(on) 5 ns Turn-on delay time ID=150mA, VDD 10V Rise time tr 10 ns VGS=4.0V Turn-off delay time td(off) 15 ns RL=67 Fall time tf 10 ns RG=10 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 100mA, VGS=0V Pulsed z Electrical characteristic curves 10 10 1 VDS=10V VGS=4V VGS=2.5V Pulsed Pulsed Pulsed Ta=125C 0.1 Ta=125C 75C 75C 25C 25C 25C 0.01 25C Ta=125C 1 1 75C 0.001 25C 25C 0.0001 0.00001 0.1 0.1 0.0 0.5 1.0 1.5 0.01 0.1 1 0.01 0.1 1 GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.1 Typical transfer characteristics Fig.2 Static drain-source on-state Fig.3 Static drain-source on-state resistance vs. drain current () resistance vs. drain current () Rev.B 2/3 DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m )