X-On Electronics has gained recognition as a prominent supplier of RW1A013ZPT2R MOSFET across the USA, India, Europe, Australia, and various other global locations. RW1A013ZPT2R MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RW1A013ZPT2R ROHM

RW1A013ZPT2R electronic component of ROHM
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See Product Specifications
Part No.RW1A013ZPT2R
Manufacturer: ROHM
Category: MOSFET
Description: MOSFET MOSFET P-CH 1.5V 1.3A 6 Pin.
Datasheet: RW1A013ZPT2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 8000
Multiples : 8000
8000 : USD 0.1404
N/A

Obsolete
0
MOQ : 440
Multiples : 1
440 : USD 0.2567
N/A

Obsolete
0
MOQ : 253
Multiples : 253
253 : USD 0.2872
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Factory Pack Quantity :
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the RW1A013ZPT2R from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RW1A013ZPT2R and other electronic components in the MOSFET category and beyond.

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RW1A013ZP Datasheet Pch -12V -1.3A Small Signal MOSFET llOutline SOT-563T V -12V DSS WEMT6 R (Max.) 260m DS(on) I 1.3A D P 0.7W D llInner circuit llFeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (WEMT6). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 8000 Taping code T2R Marking XC llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -12 V DSS *1 I Continuous drain current 1.3 A D *2 I Pulsed drain current 2.6 A DP V Gate - Source voltage 10 V GSS *3 P 0.7 W D Power dissipation *4 P 0.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160802 - Rev.001 Not Recommended for New Designs RW1A013ZP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 179 /W thJA Thermal resistance, junction - ambient *4 R - - 313 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 10V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -1.3A - 190 260 GS D V = -2.5V, I = -0.6A - 280 390 GS D V = -1.8V, I = -0.6A - 400 600 GS D Static drain - source *5 R m DS(on) on - state resistance V = -1.5V, I = -0.2A - 530 1060 GS D V = -4.5V, I = -1.3A GS D - 330 470 T = 125 j R Gate resistance f = 1MHz, open drain - 32 - G Forward Transfer *5 Y V = -6V, I = -1.3A 1.4 2.5 - S fs DS D Admittance *1 VGS-4.5V *2 Pw10s , Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) 2 *4 Mounted on a FR4 (12200.8mm,Cu pad:240mm ) *5 Pulsed www.rohm.com 2/11 20160802 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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