X-On Electronics has gained recognition as a prominent supplier of RW1E014SNT2R MOSFETs across the USA, India, Europe, Australia, and various other global locations. RW1E014SNT2R MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RW1E014SNT2R ROHM

RW1E014SNT2R electronic component of ROHM
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Part No.RW1E014SNT2R
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 4V Drive Nch MOSFET Drive Nch
Datasheet: RW1E014SNT2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.4711
10 : USD 0.3643
100 : USD 0.2267
1000 : USD 0.1246
2500 : USD 0.1151
8000 : USD 0.0996
24000 : USD 0.0949
48000 : USD 0.0914
96000 : USD 0.0878
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RW1E014SNT2R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RW1E014SNT2R and other electronic components in the MOSFETs category and beyond.

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RW1E014SN Datasheet Nch 30V 1.4A Small Signal MOSFET llOutline SOT-563T V 30V DSS WEMT6 R (Max.) 240m DS(on) I 1.4A D P 0.7W D llInner circuit llFeatures 1) Low on - resistance, High speed switching. 2) Built-in G-S protection diode. 3) Space saving, small surface mount package (WEMT6) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 8000 Taping code T2R Marking PN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 1.4 A D *1 I Pulsed drain current 2.8 A DP V Gate - Source voltage 20 V GSS *2 P 0.7 W D Power dissipation *3 P 0.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160706 - Rev.001 Not Recommended for New Designs RW1E014SN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 179 /W thJA Thermal resistance, junction - ambient *3 R - - 292 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 1.4A - 170 240 GS D Static drain - source *4 R V = 4.5V, I = 1.4A - 250 350 m DS(on) GS D on - state resistance V = 4V, I = 1.4A - 270 380 GS D R Gate resistance f = 1MHz, open drain - - - G Forward Transfer *4 Y V = 10V, I = 1.4A 1 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (12200.8mm,Cu pad:240mm ) *4 Pulsed www.rohm.com 2/11 20160706 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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