X-On Electronics has gained recognition as a prominent supplier of DMTH4004LK3-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMTH4004LK3-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMTH4004LK3-13 Diodes Incorporated

DMTH4004LK3-13 electronic component of Diodes Incorporated
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Part No.DMTH4004LK3-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 40V N-Ch Enh FET 3mOhm 10Vgs 100A
Datasheet: DMTH4004LK3-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.386 ea
Line Total: USD 1.39 
Availability - 2409
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
108
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2863
10 : USD 1.1699
30 : USD 1.105
100 : USD 1.0325
500 : USD 0.9999
1000 : USD 0.9847

2409
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.386
10 : USD 1.133
100 : USD 0.8822
500 : USD 0.748
1000 : USD 0.6094
2500 : USD 0.5192

   
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We are delighted to provide the DMTH4004LK3-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMTH4004LK3-13 and other electronic components in the MOSFETs category and beyond.

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DMTH4004LK3 Green 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max Rated to 175C Ideal for High Ambient Temperature D BV R Max DSS DS(ON) T = +25C C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable and 3m V = 10V 100A GS Robust End Application 40V 5m V = 4.5V 100A GS Low Rdson Minimizes Power Losses Low Qg Minimizes Switching Losses Description Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance Qualified to AEC-Q101 Standards for High Reliability (RDS(ON)) and yet maintain superior switching performance, making An Automotive-Compliant Part is Available Under Separate it ideal for high efficiency power management applications. Datasheet (DMTH4004LK3Q) Applications Mechanical Data Engine Management Systems Case: TO252 Body Control Electronics Case Material: Molded Plastic, Green Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate) TO252 (DPAK) Equivalent Circuit Top View Pin Out Top View Ordering Information (Notes 4) Part Number Case Packaging DMTH4004LK3-13 TO252 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH4004LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 40 V V DSS Gate-Source Voltage 20 V V GSS T = +25C C 100 Continuous Drain Current (Note 6), V = 10V (Note 9) I A GS D T = +100C 100 C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 200 A I DM Maximum Continuous Body Diode Forward Current (Note 6) 100 A I S Avalanche Current, L = 0.2mH 30 A I AS Avalanche Energy, L = 0.2mH 90 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 3.9 W A D Thermal Resistance, Junction to Ambient (Note 5) 38 C/W R JA Total Power Dissipation (Note 6) T = +25C P 180 W C D Thermal Resistance, Junction to Case (Note 6) 0.8 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current, T = +25C I 1 A V = 32V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 2.4 3 m V = 10V, I = 50A GS D Static Drain-Source On-Resistance R DS(ON) 4 5 m V = 4.5V, I = 50A GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 50A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance pF C 4,450 iss V = 25V, V = 0V, DS GS Output Capacitance pF C 1,407 oss f = 1MHz Reverse Transfer Capacitance pF C 74 rss Gate Resistance R 0.7 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 35 nC GS g Total Gate Charge (V = 10V) Q 83 nC GS g V = 20V, I = 30A DS D Gate-Source Charge Q 10 nC gs Gate-Drain Charge Q nC gd 11.2 Turn-On Delay Time ns t 5.9 D(ON) Turn-On Rise Time ns t 13.2 V = 10V, V = 20V, r GS DS Turn-Off Delay Time ns R = 1.6, I = 30A t 25.8 g D D(OFF) Turn-Off Fall Time ns t 7.9 F Body Diode Reverse Recovery Time t ns I = 50A, di/dt = 100A/s RR 48 F Body Diode Reverse Recovery Charge Q nC I = 50A, di/dt = 100A/s RR 72 F Notes: 5. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady state. 6. Thermal resistance from junction to solder point (on the exposed drain pin). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package Limited. 2 of 7 DMTH4004LK3 December 2015 Diodes Incorporated www.diodes.com Document number: DS37792 Rev. 2 - 2 NEW PRODUCT

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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