X-On Electronics has gained recognition as a prominent supplier of RXR035N03TCL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RXR035N03TCL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RXR035N03TCL ROHM

RXR035N03TCL electronic component of ROHM
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See Product Specifications
Part No.RXR035N03TCL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET TRANSISTOR
Datasheet: RXR035N03TCL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.222 ea
Line Total: USD 666 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.222
9000 : USD 0.2127
24000 : USD 0.2105
45000 : USD 0.2093

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RXR035N03TCL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RXR035N03TCL and other electronic components in the MOSFETs category and beyond.

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Data Sheet 4V Drive Nch MOSFET RXR035N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT3 Features (3) 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (2) 3) Small Surface Mount Package (TSMT3). Abbreviated symbol : XQ Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TCL Basic ordering unit (pieces) 3000 1 RXR035N03 2 Absolute maximum ratings (Ta = 25 C) (1) (2) (1) Gate Parameter Symbol Limits Unit (2) Source 1 BODY DIODE (3) Drain 2 ESD PROTECTION DIODE Drain-source voltage V 30 V DSS Gate-source voltage V 20 V GSS Continuous I 3.5 A D Drain current *1 Pulsed I 12 A DP Continuous I 0.8 A Source current S (Body Diode) *1 Pulsed I 12 A SP *2 Power dissipation P 1.0 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 125 C / W *Mounted on a ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.03 - Rev.A 1/6Data Sheet RXR035N03 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =30V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D -35 50 I =3.5A, V =10V D GS Static drain-source on-state * R DS (on) -45 65 m I =3.5A, V =4.5V D GS resistance -50 70 I = 3.5A, V =4.0V D GS * Forward transfer admittance l Y l 2.2 - - S I =3.5A, V =10V fs D DS Input capacitance C - 180 - pF V =10V iss DS Output capacitance C - 70 - pF V =0V oss GS Reverse transfer capacitance C - 35 - pF f=1MHz rss Turn-on delay time t - 10 - ns I =1.7A, V 15V * d(on) D DD Rise time t - 25 - ns V =10V * r GS Turn-off delay time t - 25 - ns R =8.8 * d(off) L Fall time t * -7 - nsR =10 f G Total gate charge Q * - 3.3 - nC I =3.5A g D Gate-source charge Q - 1.0 - nC V 15V * gs DD Gate-drain charge Q - 1.0 - nC V =5V * gd GS *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =3.5A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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