RXR035N03TCL ROHM

Data Sheet 4V Drive Nch MOSFET RXR035N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT3 Features (3) 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (2) 3) Small Surface Mount Package (TSMT3). Abbreviated symbol : XQ Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TCL Basic ordering unit (pieces) 3000 1 RXR035N03 2 Absolute maximum ratings (Ta = 25 C) (1) (2) (1) Gate Parameter Symbol Limits Unit (2) Source 1 BODY DIODE (3) Drain 2 ESD PROTECTION DIODE Drain-source voltage V 30 V DSS Gate-source voltage V 20 V GSS Continuous I 3.5 A D Drain current *1 Pulsed I 12 A DP Continuous I 0.8 A Source current S (Body Diode) *1 Pulsed I 12 A SP *2 Power dissipation P 1.0 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 125 C / W *Mounted on a ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.03 - Rev.A 1/6Data Sheet RXR035N03 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =30V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D -35 50 I =3.5A, V =10V D GS Static drain-source on-state * R DS (on) -45 65 m I =3.5A, V =4.5V D GS resistance -50 70 I = 3.5A, V =4.0V D GS * Forward transfer admittance l Y l 2.2 - - S I =3.5A, V =10V fs D DS Input capacitance C - 180 - pF V =10V iss DS Output capacitance C - 70 - pF V =0V oss GS Reverse transfer capacitance C - 35 - pF f=1MHz rss Turn-on delay time t - 10 - ns I =1.7A, V 15V * d(on) D DD Rise time t - 25 - ns V =10V * r GS Turn-off delay time t - 25 - ns R =8.8 * d(off) L Fall time t * -7 - nsR =10 f G Total gate charge Q * - 3.3 - nC I =3.5A g D Gate-source charge Q - 1.0 - nC V 15V * gs DD Gate-drain charge Q - 1.0 - nC V =5V * gd GS *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =3.5A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A