Ordering number : EN8759A EMH2314 Power MOSFET EMH2314 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I = --1mA, V =0V --12 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V = --12V, V =0V --10 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Gate Threshold Voltage V (th) V = --6V, I = --1mA --0.4 --1.3 V GS DS D g Forward Transconductance V = --6V, I = --2.5A 11 S FS DS D R (on)1 I = --2.5A, V = --4.5V 28 37 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I = --1.5A, V = --2.5V 53 75 m DS D GS R (on)3 I = --0.5A, V = --1.8V 133 200 m DS D GS Input Capacitance Ciss 1300 pF Output Capacitance Coss V = --6V, f=1MHz 158 pF DS Reverse Transfer Capacitance Crss 143 pF Turn-ON Delay Time t (on) 16 ns d Rise Time t 77 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 79 ns d Fall Time t 58 ns f Total Gate Charge Qg 12 nC Gate-to-Source Charge Qgs V = --6V, V = --4.5V, I = --5A 3 nC DS GS D Gate-to-Drain Miller Charge Qgd 2 nC Forward Diode Voltage V I = --5A, V =0V --0.9 --1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V = --6V V IN DD 0V --4.5V I = --2.5A D V IN R =2.4 L D V OUT PW=10s D.C.1% G EMH2314 P.G 50 S Ordering Information Device Package Shipping memo EMH2314-TL-H EMH8 3,000pcs./reel Pb-Free and Halogen Free No.8759-2/5