EMH2407 EMH2407 General-Purpose Switching Device Applications Features www.onsemi.com Low ONResistance Best Suited for LiB Charging and Discharging Switch 876 5 CommonDrain Type 2.5 V Drive Protection Diode In ABSOLUTE MAXIMUM RATINGS at Ta = 25C Symbol Parameter Conditions Ratings Unit V Drain to Source 20 V DSS Voltage 123 4 V Gate to Source 12 V ELECTRICAL CONNECTION GSS Voltage I Drain Current (DC) 6 A D I Drain Current (Pulse) 40 A PW 10 s, DP duty cycles 1% P Allowable Power When mounted on 1.3 W D Dissipation ceramic substrate 2 (900 mm 0.8 mm) 1 unit P Total Dissipation When mounted on 1.4 W T ceramic substrate EMH8 2 (900 mm 0.8 mm) CASE 419AT T Channel 150 C CH Temperature MARKING DIAGRAM T Storage 55 to C STG Temperature +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be LG assumed, damage may occur and reliability may be affected. LOT No. LG = Specific Device Code XX = Lot Number ORDERING INFORMATION Device Package Memo Shipping EMH2407TLHPEMH8bFree/ 3000 Units/ Halogen Reel Free Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: April, 2019 Rev. 2 EMH2407/DEMH2407 ELECTRICAL CHARACTERISTICS at Ta = 25C Symbol Parameter Conditions Min Typ Max Unit V Drain to Source Breakdown I = 1 mA, V = 0 V 20 V (BR)DSS D GS Voltage I Zero Gate Voltage Drain Current V = 20 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 8 V, V = 0 V 10 A GSS GS DS V (off) Cutoff Voltage V = 10 V, I = 1 mA 0.5 1.3 V GS DS D yfs Forward Transfer Admittance V = 10 V, I = 3 A 3 5 S DS D R (on)1 Static Drain to Source OnState I = 3 A, V = 4.5 V 13 19 25 m DS D GS Resistance R (on)2 I = 3 A, V = 4 V 14 20 26 m DS D GS R (on)3 I = 1.5 A, V = 2.5 V 16 28 39 m DS D GS C Input Capacitance V = 10 V, f = 1 MHz 580 pF iss DS C Output Capacitance 95 pF oss C Reverse Transfer Capacitance 75 pF rss t (on) TurnON Delay Time See specified Test Circuit. 310 ns d t Rise Time 1020 ns r t (off) TurnOFF Delay Time 3000 ns d t Fall Time 2250 ns f Qg Total Gate Charge V = 10 V, V = 4.5 V, I = 6 A 6.3 nC DS GS D Qgs Gate to Source Charge 0.83 nC Qgd Gate to Drain Miller Charge 1.9 nC V Diode Forward Voltage I = 6 A, V = 0 V 0.78 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. V V = 10 V IN DD 4.5 V 0 V I = 3 A D V R = 3.33 IN L D V OUT PW = 10 s D.C. 1% Rg G EMH2407 P.G 50 S Rg = 2 k Figure 1. Switching Time Test Circuit www.onsemi.com 2