MDU1513URH Magnachip

MDU1513 Single N-Channel Trench MOSFET 30V MDU1513 Single N-channel Trench MOSFET 30V, 88.1A, 4.6m General Description Features The MDU1513 uses advanced MagnaChips MOSFET V = 30V DS Technology, which provides high performance in on-state I = 88.1A V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDU1513 is suitable device for DC/DC Converter < 4.6 m V = 10V GS and general purpose applications. < 7.0 m VGS = 4.5V 100% UIL Tested 100% Rg Tested D D D D D D D D D G S S S G G S S S PowerDFN56 S o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 88.1 C o T =70 C 70.4 C (1) Continuous Drain Current I A D o (3) T =25 C 26.1 A o (3) T =70 C 20.8 A Pulsed Drain Current I 100 A DM o T =25 C 62.5 C o TC=70 C 40.0 Power Dissipation P W D o (3) T =25 C 5.5 A o (3) T =70 C 3.5 A (2) Single Pulse Avalanche Energy E 118 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 22.7 JA o C/W Thermal Resistance, Junction-to-Case R 2.0 JC May. 2011. Version 1.2 1 MagnaChip Semiconductor Ltd. MDU1513 Single N-Channel Trench MOSFET 30V Ordering Information Part Number Temp. Range Package Packing Quantity Rohs Status o MDU1513URH -55~150 C PowerDFN56 Tape & Reel 3000 units Halogen Free o Electrical Characteristics (T =25 C) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 30 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.3 1.9 2.7 GS(th) DS GS D V = 30V, V = 0V - - 1 DS GS Drain Cut-Off Current I DSS o T =55 C - - 5 A J Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 20A - 4.0 4.6 GS D o Drain-Source ON Resistance R T =125 C - 5.8 6.7 m DS(ON) J V = 4.5V, I = 17A - 5.8 7.0 GS D Forward Transconductance g V = 5V, I = 10A - 35 - S fs DS D Dynamic Characteristics Total Gate Charge Q 20.3 27.0 33.8 g(10V) Total Gate Charge Q 9.7 12.9 16.1 g(4.5V) V = 15.0V, I = 20A, DS D nC V = 10V GS Gate-Source Charge Q - 5.4 - gs Gate-Drain Charge Q - 4.3 - gd Input Capacitance C 1295 1726 2158 iss V = 15.0V, V = 0V, DS GS Reverse Transfer Capacitance C 127 169 211 pF rss f = 1.0MHz Output Capacitance C 247 329 411 oss Turn-On Delay Time t - 9.9 - d(on) Rise Time t - 12.1 - r V = 10V, V = 15.0V, GS DS ns I = 20A , R = 3.0 D G Turn-Off Delay Time t - 33.5 - d(off) Fall Time t - 9.5 - f Gate Resistance Rg f=1 MHz - 1.5 2.5 Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 20A, V = 0V - 0.8 1.1 V SD S GS Body Diode Reverse Recovery Time t - 27.3 41.0 ns rr I = 20A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 19.7 29.6 nC rr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. E is tested at starting Tj = 25, L = 0.1mH, I = 27A, V = 27V, V = 10V. AS AS DD GS 3. T < 10sec May. 2011. Version 1.2 2 MagnaChip Semiconductor Ltd.