MDU1511RH Magnachip

MDU1511 Single N-Channel Trench MOSFET 30V MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4 m General Description Features The MDU1511 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 100A V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDU1511 is suitable device for DC/DC Converter < 2.4 m V = 10V GS < 3.3 m V = 4.5V and general purpose applications. GS 100% UIL Tested 100% Rg Tested D D D D D D D D D G S S S G G S S S PowerDFN56 S o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 100.0 C o T =70 C 94.0 C (1) Continuous Drain Current I A D o (3) TA=25 C 36.1 o (3) T =70 C 28.8 A I DM Pulsed Drain Current 400 A o T =25 C 78.1 C o T =70 C 50.0 C Power Dissipation P W D o (3) T =25 C 5.5 A o (3) T =70 C 3.5 A (2) Single Pulse Avalanche Energy E 287 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient Steady State R 22.7 JA o C/W Thermal Resistance, Junction-to-Case Steady State R 1.6 JC 1 Apr. 2016. Version 1.4 MagnaChip Semiconductor Ltd. MDU1511 Single N-Channel Trench MOSFET 30V Ordering Information Part Number Temp. Range Package Packing Quantity Rohs Status o MDU1511RH -55~150 C PowerDFN56 Tape & Reel 3000 units Halogen Free o Electrical Characteristics (T = 25 C) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 30 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.3 1.8 2.7 GS(th) DS GS D V = 30V, V = 0V - - 1 DS GS Drain Cut-Off Current I DSS o T =55 C - - 5 A J Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 28A - 2.0 2.4 GS D o Drain-Source ON Resistance R T =125 C - 2.9 3.5 m DS(ON) J V = 4.5V, I = 24A - 2.7 3.3 GS D Forward Transconductance g V = 5V, I = 10A - 45 - S fs DS D Dynamic Characteristics Total Gate Charge Q 38.8 51.8 64.8 g(10V) Total Gate Charge Q 18.7 25.0 31.3 g(4.5V) V = 15V, I = 28A, DS D nC V = 10V GS Gate-Source Charge Q - 9.9 - gs Gate-Drain Charge Q - 9.4 - gd Input Capacitance C 2510 3347 4184 iss V = 15V, V = 0V, DS GS Reverse Transfer Capacitance C 246 328 410 pF rss f = 1.0MHz Output Capacitance C 490 653 817 oss Turn-On Delay Time t - 11.2 - d(on) Rise Time t - 23.2 - r V = 10V, V = 15V, GS DS ns I = 28A, R = 3.0 D G Turn-Off Delay Time t - 45.6 - d(off) Fall Time t - 18.6 - f Gate Resistance Rg f=1 MHz - 1.0 2.0 Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 28A, V = 0V - 0.8 1.1 V SD S GS Body Diode Reverse Recovery Time t - 33.8 50.7 ns rr I = 28A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 22.3 33.5 nC rr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. E is tested at starting Tj = 25, L = 0.1mH, I = 42.0A, V = 27V, V = 10V AS AS DD GS 3. T < 10sec. 2 Apr. 2016. Version 1.4 MagnaChip Semiconductor Ltd.