MDS9651URH Magnachip

MDS9651 Complementary N-P Channel Trench MOSFET MDS9651 Complementary N-P Channel Trench MOSFET General Description Features N-Channel P-Channel The MDS9651 uses advanced MagnaChips MOSFET Technology to provide low on-state V = 30V V = -30V DS DS resistance, high switching performance and excellent I = 6.9A V = 10V I = -6.0A V = -10V D GS D GS reliability R R DS(ON) DS(ON) <28m V = 10V <35m V = -10V GS GS <42m V = 4.5V <55m V = -4.5V GS GS Applications Inverters General purpose applications D1 D2 5(D2) 6(D2) 7(D1) 8(D1) G1 G2 4(G2) 3(S2) 2(G1) 1(S1) S1 S2 o Absolute Maximum Ratings (T =25 C unless otherwise noted) a Rating Characteristics Symbol Unit N-Ch P-Ch Drain-Source Voltage V 30 -30 V DSS Gate-Source Voltage V 20 20 V GSS o T =25 C 6.9 -6.0 A a Continuous Drain Current I D o T =100 C 4.3 -4.1 A a Pulsed Drain Current I 30 -30 A DM o T =25 C 2 2 a (1) Power Dissipation P W D o T =100 C 0.8 0.8 a (2) Single Pulse Avalanche Energy E 18 60.5 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Device Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient(Steady-State) N-Ch R 62.5 JA Thermal Resistance, Junction-to-Case N-Ch R 60 JC o C/W (1) Thermal Resistance, Junction-to-Ambient(Steady-State) P-Ch R 62.5 JA Thermal Resistance, Junction-to-Case P-Ch R 40 JC 1 January 2009. Version 1.0 MagnaChip Semiconductor Ltd. MDS9651 Complementary N-P Channel Trench MOSFET Ordering Information Part Number Temp. Range Package Packing RoHS Status o MDS9651URH -55~150 C SOIC-8 Tape & Reel Halogen Free o N-channel Electrical Characteristics (T =25 C unless otherwise noted) a Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 30 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.0 1.9 3.0 GS(th) DS GS D Drain Cut-Off Current I V = 24V, V = 0V - 1.0 DSS DS GS A Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 6.9A - 21.5 28.0 GS D Drain-Source ON Resistance R m DS(ON) V = 4.5V, I = 5.0A - 31.5 42.0 GS D Forward Transconductance g V = 5V, I = 6.9A - 15.4 - S FS DS D Dynamic Characteristics Total Gate Charge Q - 6.94 - g V = 15V, I = 6.9A, DS D Gate-Source Charge Q - 1.54 - nC gs V = 10V GS Gate-Drain Charge Q - 1.96 - gd Input Capacitance C - 334 - iss V = 15V, V = 0V, DS GS Reverse Transfer Capacitance C - 48 - pF rss f = 1.0MHz Output Capacitance C - 83 - oss Turn-On Delay Time t - 3.5 - d(on) Turn-On Rise Time t - 25.4 - r VGS = 10V ,VDS = 15V, ns R = 2.2, R = 3 L GEN Turn-Off Delay Time t - 14.2 - d(off) Turn-Off Fall Time t - 10.5 - f Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 1A, V = 0V - 0.75 1.0 V SD S GS Body Diode Reverse Recovery Time t - 16.5 - ns rr I = 6.9A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 7.8 - nC rr Note : 1. Surface mounted FR-4 board with 2oz. Copper. 2. Starting TJ = 25C, L = 1mH, IAS = 6A, VDD = 15V, VGS = 10V 2 January 2009. Version 1.0 MagnaChip Semiconductor Ltd.