EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET / EMT6 Silicon P-channel MOSFET z Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive). 4) Built-in G-S Protection Diode. Each lead has same dimensions Abbreviated symbol : M01 zApplications Switching z Packaging specifications z Inner circuit Package Taping (6) (5) (4) Type Code T2R 1 Basic ordering unit (pieces) 8000 EM6M1 2 2 (1) Tr1 (Nch) Source 1 (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (1) (2) (3) (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate 1 ESD PROTECTION DIODE (6) Tr1 (Nch) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Limits Parameter Symbol Unit Tr1 : N-ch Tr2 : P-ch Drain-source voltage VDSS 30 20 V Gate-source voltage V 20 12 V GSS Continuous ID 0.1 0.2 A Drain current 1 Pulsed IDP 0.4 0.4 A 150 mW / TOTAL 2 Power dissipation PD 120 mW / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw 10s, Duty cycle 1% 2 Mounted on a ceramic board z Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 1/6 EM6M1 Transistors N-ch z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 1 AVGS= 20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID=10A, VGS=0V Zero gate voltage drain current I 1 AV =30V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.8 1.5 V VDS=3V, ID=100A 58 ID=10mA, VGS=4V Static drain-source on-state RDS (on) resistance 713 I =1mA, V =2.5V D GS Forward transfer admittance Yfs 20 mS VDS=3V, ID=10mA Input capacitance Ciss 13 pF VDS=5V Output capacitance C 9 pF V =0V oss GS Reverse transfer capacitance Crss 4 pF f=1MHz Turn-on delay time td (on) 15 ns VDD 5V ID=10mA Rise time tr 35 ns VGS=5V Turn-off delay time td (off) 80 ns RL=500 Fall time tf 80 ns RG=10 Total gate charge Q 0.9 nC V 15V, I =0.1A g DD D Gate-source charge Qgs 0.2 nC VGS=4.5V Gate-drain charge Qgd0.2 nC RL=150, RG=10 Pulsed P-ch z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit Gate-source leakage IGSS 10 AVGS= 12V, VDS=0V Drain-source breakdown voltage V 20 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 20V, VGS=0V Gate threshold voltage VGS (th) 0.7 2.0 V VDS= 10V, ID= 1mA 1.0 1.5 I = 0.2A, V = 4.5V D GS Static drain-source on-state RDS (on) 1.1 1.6 ID= 0.2A, VGS= 4V resistance 2.0 3.0 ID= 0.2A, VGS= 2.5V Forward transfer admittance Y 0.2 SV = 10V, I = 0.15A fs DS D Input capacitance Ciss 50 pF VDS= 10V Output capacitance Coss 5 pF VGS= 0V Reverse transfer capacitance C 5 pF f=1MHz rss Turn-on delay time td (on) 9 ns VDD 15V ID= 0.15A Rise time tr 6 ns VGS= 4.5V Turn-off delay time t 35 ns d (off) RL= 100 Fall time tf 45 ns RG= 10 Total gate charge Qg 1.2 nC VDD 15V, ID= 0.2A Gate-source charge Q 0.2 nC V = 4.5V gs GS Gate-drain charge Qgd0.2 nC RL= 75, RG= 10 Pulsed 2/6