MDS1656URH Magnachip

MDS1656 N-Channel Trench MOSFET 30V, 7.2A,28m MDS1656 Single N-Channel Trench MOSFET 30V, 7.2A, 28m General Description Features The MDS1656 uses advanced MagnaChips trench MOSFET V = 30V DS Technology to provide high performance in on-state resistance, I = 7.2A V = 10V D GS switching performance and reliability R DS(ON) < 28m V = 10V GS Low R , low gate charge can be offering superior benefit in < 42m V = 4.5V DS(ON) GS the application. Applications Inverters General purpose applications D 5(D) 6(D) 7(D) 8(D) G 4(G) 3(S) 2(S) 1(S) S o Absolute Maximum Ratings (T =25 C unless otherwise noted) a Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 7.2 A C (1) Continuous Drain Current I D o T =70 C 6.2 A C Pulsed Drain Current I 30 A DM o T =25 C 2 C Power Dissipation P W D o T =70 C 1.44 C (2) Single Pulse Avalanche Energy E 20 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient(Steady-State) R 100 JA o C/W Thermal Resistance, Junction-to-Case R 60 JC August 2008. Version 1.0 1 MagnaChip Semiconductor Ltd. MDS1656 N-Channel Trench MOSFET 30V, 7.2A,28m Ordering Information Part Number Temp. Range Package Packing RoHS Status o MDS1656R -55~150 C SO-8 Tape & Reel Halogen Free o Electrical Characteristics (T =25 C unless otherwise noted) a Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 30 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.0 1.9 3.0 GS(th) DS GS D Drain Cut-Off Current IDSS VDS = 24V, VGS = 0V - 1 A Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 6.9A - 21.5 28 GS D Drain-Source ON Resistance R m DS(ON) V = 4.5V, I = 5.0A - 31.5 42 GS D On-State Drain Current I V = 5V, V = 4.5V 20 - - A D(ON) DS GS Forward Transconductance g V = 5V, I = 6.9A 10 15.4 - S FS DS D Maximum Body-Diode Continuous Current - - Dynamic Characteristics Total Gate Charge Q - 6.94 - g V = 15V, I = 6.9A, DS D Gate-Source Charge Q - 1.54 - nC gs V = 10V GS Gate-Drain Charge Qgd - 1.4 - Input Capacitance C - 334 - iss V = 15V, V = 0V, DS GS Reverse Transfer Capacitance C - 48 - pF rss f = 1.0MHz Output Capacitance C - 83 - oss Turn-On Delay Time t - 3.5 - d(on) Turn-On Rise Time t - 25.4 - r V = 10V ,V = 15V, GS DS ns R = 2.2, R = 3 L GEN Turn-Off Delay Time t - 14.2 - d(off) Turn-Off Fall Time t - 10.5 - f Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 1A, V = 0V - 0.75 1.0 V SD S GS Body Diode Reverse Recovery Time trr - 16.5 20 ns I = 6.9A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 7.8 10 nC rr Notes : 1. Surface mounted RF4 board with 2oz. Copper.. 2. Starting TJ = 25C, L = 1mH, IAS = 5A, VDD = 15V, VGS = 10V. August 2008. Version 1.0 2 MagnaChip Semiconductor Ltd.