X-On Electronics has gained recognition as a prominent supplier of EMB4T2R Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMB4T2R Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

EMB4T2R ROHM

Name: EMB4T2R
Brand: ROHM
SKU: EMB4T2R_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

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Part No.	EMB4T2R
Manufacturer:	ROHM
Category:	Bipolar Transistors - Pre-Biased
Description:	Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA
Datasheet:	EMB4T2R Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

8000: USD 0.0902 ea
Line Total: USD 721.6

Availability - 0

MOQ: 8000 Multiples: 8000
Pack Size: 8000

EMB4T2R More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 8000 Multiples : 8000	8000 : USD 0.0902 24000 : USD 0.0891 48000 : USD 0.0858

We are delighted to provide the EMB4T2R from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMB4T2R and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

EMB4 / UMB4N General purpose (dual digital transistor) Datasheet llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V -50V CEO I -100mA C R 10k 1 EMB4 UMB4N (EMT6) (UMT6) llFeatures llInner circuit 1)Two DTA114T chips in a EMT or UMT package. 2)Mounting possible with EMT3 or UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMB4 1616 T2R 180 8 8000 B4 (EMT6) SOT-363 UMB4N 2021 TN 180 8 3000 B4 (UMT6) www.rohm.com 1/5 20151118 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMB4 / UMB4N Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage -50 V CBO Collector-emitter voltage V -50 V CEO Emitter-base voltage V -5 V EBO I Collector current -100 mA C *1*2 P EMB4 150 D Power dissipation mW/Total *1*2 P UMB4N 150 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage Emitter-base breakdown voltage BV I = -50A -5 - - V EBO E Collector cut-off current I V = -50V - - -500 nA CBO CB Emitter cut-off current I V = -4V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -10mA, I = -1mA - - -300 mV CE(sat) C B h DC current gain V = -5V, I = -1mA 100 250 600 - FE CE C R Input resistance - 7 10 13 k 1 V = -10V, I = 5mA, CE E *3 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 Characteristics of built-in transistor. www.rohm.com 2/5 20151118 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer ROHM ROHM
Product Category Bipolar Transistors - Pre-Biased Bipolar Transistors - Pre-Biased
RoHS - XON Y Y
Configuration Dual Dual
Transistor Polarity Pnp Pnp
Typical Input Resistor 10 Kohms 10 Kohms
Mounting Style Smd/Smt Smd/Smt
DC Collector/Base Gain hFE Min 100 100
Collector- Emitter Voltage VCEO Max 50 V 50 V
Continuous Collector Current 100 mA 100 mA
Peak DC Collector Current 100 mA 100 mA
Maximum Operating Temperature + 150 C + 150 C
Series Emb4 Emb4
Packaging Cut Tape Cut Tape
Height 0.5 mm 0.5 mm
Length 1.6 mm 1.6 mm
Width 1.2 mm 1.2 mm
Brand Rohm Semiconductor Rohm Semiconductor
Product Type Bjts - Bipolar Transistors - Pre - Biased Bjts - Bipolar Transistors - Pre - Biased
Factory Pack Quantity : 8000 8000
Subcategory Transistors Transistors
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Taric 8541290000 8541290000