X-On Electronics has gained recognition as a prominent supplier of NSBC143ZDXV6T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NSBC143ZDXV6T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

NSBC143ZDXV6T1G ON Semiconductor

NSBC143ZDXV6T1G electronic component of ON Semiconductor
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Part No.NSBC143ZDXV6T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased SOT-563 DUAL 4.7/47 K OH
Datasheet: NSBC143ZDXV6T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.385 ea
Line Total: USD 0.38 
Availability - 57294
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0913

57294
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.385
10 : USD 0.2464
100 : USD 0.1155
1000 : USD 0.0836
4000 : USD 0.0814
8000 : USD 0.0649
24000 : USD 0.0638
48000 : USD 0.0616

   
Manufacturer
Product Category
RoHS - XON
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
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Maximum Operating Temperature
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Dc Current Gain Hfe Max
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSBC143ZDXV6T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSBC143ZDXV6T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6 Dual NPN Bias Resistor Transistors www.onsemi.com R1 = 4.7 k , R2 = 47 k NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R 1 R 2 Transistor (BRT) contains a single transistor with a monolithic bias Q network consisting of two resistors a series base resistor and a 1 base-emitter resistor. The BRT eliminates these individual Q 2 components by integrating them into a single device. The use of a BRT R can reduce both system cost and board space. 2 R 1 Features (4) (5) (6) Simplifies Circuit Design Reduces Board Space MARKING DIAGRAMS Reduces Component Count S and NSV Prefix for Automotive and Other Applications 6 Requiring Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable SOT363 7K M CASE 419B These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 MAXIMUM RATINGS (T = 25C, common for Q and Q , unless otherwise noted) A 1 2 SOT563 7K M Rating Symbol Max Unit CASE 463A 1 Collector-Base Voltage V 50 Vdc CBO Collector-Emitter Voltage V 50 Vdc CEO Collector Current Continuous I 100 mAdc C SOT963 Y M Input Forward Voltage V 30 Vdc CASE 527AD IN(fwd) 1 Input Reverse Voltage V 5 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the 7K/Y = Specific Device Code device. If any of these limits are exceeded, device functionality should not be M = Date Code* assumed, damage may occur and reliability may be affected. = Pb-Free Package ORDERING INFORMATION (Note: Microdot may be in either location) Device Package Shipping *Date Code orientation may vary depending upon manufacturing location. MUN5233DW1T1G, SOT363 3,000/Tape & Reel SMUN5233DW1T1G NSBC143ZDXV6T1G, SOT563 4,000/Tape & Reel NSVBC143ZDXV6T1G NSBC143ZDXV6T5G SOT563 8,000/Tape & Reel NSBC143ZDP6T5G SOT963 8,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: July, 2018 Rev. 3 DTC143ZD/DMUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5233DW1 (SOT363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5233DW1 (SOT363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 493 (Note 2) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 1) 188 (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143ZDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 350 NSBC143ZDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143ZDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 4) 231 MW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 540 (Note 5) 464 NSBC143ZDP6 (SOT963) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 MW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 369 (Note 5) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 2 4. FR4 100 mm , 1 oz. copper traces, still air. 2 5. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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