EMB3 / UMB3N / IMB3A Datasheet General purpose (dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V -50V CEO I -100mA C R 4.7k 1 EMB3 UMB3N (EMT6) (UMT6) SOT-457 llFeatures 1)Two DTA143T chips in a EMT6 or UMT6 or SMT6 package. IMB3A 2)Mounting possible with EMT3 or UMT3 or (SMT6) SMT3 automatic mounting machines. 3)Transistor elements are independent, llInner circuit eliminating interference. 4)Mounting cost and area can be cut in half. EMB3 / UMB3N IMB3A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMB3 1616 T2R 180 8 8000 B3 (EMT6) SOT-363 UMB3N 2021 TN 180 8 3000 B3 (UMT6) SOT-457 IMB3A 2928 T110 180 8 3000 B3 (SMT6) www.rohm.com 1/6 20151019 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMB3 / UMB3N / IMB3A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C *1*2 P EMB3 150 D *1*2 P Power dissipation UMB3N 150 mW/Total D *1*3 IMB3A P 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E I V = -50V Collector cut-off current - - -500 nA CBO CB I V = -4V Emitter cut-off current - - -500 nA EBO EB Collector-emitter saturation voltage V I = -5mA, I = -0.25mA - - -300 mV C B CE(sat) h V = -5V, I = -1mA DC current gain 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = -10V, I = 5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151019 - Rev.002