X-On Electronics has gained recognition as a prominent supplier of EMB3T2R Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMB3T2R Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

EMB3T2R ROHM

EMB3T2R electronic component of ROHM
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See Product Specifications
Part No.EMB3T2R
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA
Datasheet: EMB3T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4279 ea
Line Total: USD 0.43 
Availability - 6793
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 EMB3T2R More Buying Options & Price Grid(s)

Availability Price Quantity
6793
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4279
10 : USD 0.3157
100 : USD 0.1793
1000 : USD 0.0935
2500 : USD 0.0825
8000 : USD 0.066
24000 : USD 0.0605
48000 : USD 0.0583
96000 : USD 0.0572

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMB3T2R from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMB3T2R and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

EMB3 / UMB3N / IMB3A Datasheet General purpose (dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V -50V CEO I -100mA C R 4.7k 1 EMB3 UMB3N (EMT6) (UMT6) SOT-457 llFeatures 1)Two DTA143T chips in a EMT6 or UMT6 or SMT6 package. IMB3A 2)Mounting possible with EMT3 or UMT3 or (SMT6) SMT3 automatic mounting machines. 3)Transistor elements are independent, llInner circuit eliminating interference. 4)Mounting cost and area can be cut in half. EMB3 / UMB3N IMB3A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMB3 1616 T2R 180 8 8000 B3 (EMT6) SOT-363 UMB3N 2021 TN 180 8 3000 B3 (UMT6) SOT-457 IMB3A 2928 T110 180 8 3000 B3 (SMT6) www.rohm.com 1/6 20151019 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMB3 / UMB3N / IMB3A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C *1*2 P EMB3 150 D *1*2 P Power dissipation UMB3N 150 mW/Total D *1*3 IMB3A P 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E I V = -50V Collector cut-off current - - -500 nA CBO CB I V = -4V Emitter cut-off current - - -500 nA EBO EB Collector-emitter saturation voltage V I = -5mA, I = -0.25mA - - -300 mV C B CE(sat) h V = -5V, I = -1mA DC current gain 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = -10V, I = 5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151019 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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