MDS1521URH Magnachip

MDS1521 Single N-Channel Trench MOSFET 30V MDS1521 Single N-channel Trench MOSFET 30V, 28.2A, 4.0m General Description Features The MDS1521 uses advanced MagnaChips MOSFET V = 30V DS Technology, which provides high performance in on-state I = 28.2A V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDS1521 is suitable for DC/DC converter and < 4.0m V = 10V GS general purpose applications. < 5.5m VGS = 4.5V 100% UIL Tested 100% Rg Tested D 5(D) 6(D) 7(D) 8(D) G 4(G) 3(S) 2(S) 1(S) S o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 28.2 C o T =70 C 22.6 A C (1) Continuous Drain Current I D o (3) T =25 C 18.8 A o (3) T =70 C 15.1 A Pulsed Drain Current I 40 A DM o T =25 C 5.6 C o T =70 C 3.6 C Power Dissipation P W D o (3) T =25 C 2.5 A o (3) T =70 C 1.6 A (2) Single Pulse Avalanche Energy E 223 mJ AS o Junction and Storage Temperature Range T , T -55~150 J stg C Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 50 JA o C/W Thermal Resistance, Junction-to-Case R 22 JC 1 June. 2011. Version 1.2 MagnaChip Semiconductor Ltd. MDS1521 Single N-Channel Trench MOSFET 30V Ordering Information Part Number Temp. Range Package Packing Quantity Rohs Status o MDS1521URH -55~150 C SOIC-8 Tape & Reel 3000 units Halogen Free o Electrical Characteristics (T = 25 C) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 30 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.3 1.9 2.7 GS(th) DS GS D V = 30V, V = 0V - - 1 DS GS Drain Cut-Off Current I DSS o T =55 C - - 5 A J Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 15A - 3.5 4.0 GS D o Drain-Source ON Resistance R T =125 C - 5.1 5.8 m DS(ON) J V = 4.5V, I = 12A - 4.5 5.5 GS D Forward Transconductance g V = 5V, I = 15A - 55 - S fs DS D Dynamic Characteristics Total Gate Charge Q 26.8 38.3 50.0 g(10V) Total Gate Charge Q 12.7 18.2 23.7 g(4.5V) V = 15.0V, I = 15A, DS D nC V = 10V GS Gate-Source Charge Q - 7.6 - gs Gate-Drain Charge Q - 13.3 - gd Input Capacitance C 1760 2514 3269 iss V = 15.0V, V = 0V, DS GS Reverse Transfer Capacitance C 163 233 304 pF rss f = 1.0MHz Output Capacitance C 340 486 632 oss Turn-On Delay Time t - 9.3 - d(on) Rise Time t - 24.0 - r V = 10V, V = 15.0V, GS DS ns I = 15A, R = 3.0 D G Turn-Off Delay Time t - 39.2 - d(off) Fall Time t - 14.0 - f Gate Resistance R f=1 MHz 0.5 0.9 3.0 g Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 15A, V = 0V - 0.81 1.1 V SD S GS Body Diode Reverse Recovery Time t - 28.1 42.2 ns rr I = 15A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 19.6 29.3 nC rr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. E is tested at starting Tj = 25, L = 0.1mH, I = 37.3A, V = 27V, V = 10V AS AS DD GS 3. T < 10sec. 2 June. 2011. Version 1.2 MagnaChip Semiconductor Ltd.