X-On Electronics has gained recognition as a prominent supplier of EMB11FHAT2R Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMB11FHAT2R Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

EMB11FHAT2R ROHM

EMB11FHAT2R electronic component of ROHM
EMB11FHAT2R ROHM
EMB11FHAT2R Bipolar Transistors - Pre-Biased
EMB11FHAT2R  Semiconductors

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See Product Specifications
Part No. EMB11FHAT2R
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased PNP+PNP SOT-563 -50V VCC -0.1A IC
Datasheet: EMB11FHAT2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3375 ea
Line Total: USD 0.34 
Availability - 4864
Ship by Fri. 02 May to Tue. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4864
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 0.3375
10 : USD 0.2087
100 : USD 0.1272
500 : USD 0.0869
1000 : USD 0.0704
2500 : USD 0.0649
5000 : USD 0.0605
8000 : USD 0.0517

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Continuous Collector Current
Maximum Operating Temperature
Packaging
Qualification
Output Voltage
Brand
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMB11FHAT2R from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMB11FHAT2R and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMB11 FHA General purpose (Dual digital transistors) Datasheet AEC-Q101 Qualified llOutline Parameter DTr1 and DTr2 SOT-563 V -50V CC SC-107C I -100mA C(MAX.) R 10k 1 R EMT6 10k 2 llFeatures llInner circuit 1)Two DTA114E chips in a EMT6 package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMB11 FHA 1616 T2R 180 8 8000 B11 (EMT6) www.rohm.com 1/5 20161012 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. EMB11 FHA Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage -50 V CC Input voltage V -40 to 10 V IN Output current I -50 mA O *1 I Collector current -100 mA C(MAX) *2*3 P Power dissipation 150 mW/TOTAL D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -10mA -3 - - I(on) O O V Output voltage I = -10mA, I = -0.5mA - -100 -300 mV O(on) O I I Input current V = -5V - - -880 A I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I DC current gain G V = -5V, I = -5mA 30 - - - I O O Input resistance R - 7 10 13 k 1 Resistance ratio R /R - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land *3 120mW per element must not be exceeded. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/5 20161012 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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