EMB11FHAT2R ROHM

EMB11 FHA General purpose (Dual digital transistors) Datasheet AEC-Q101 Qualified llOutline Parameter DTr1 and DTr2 SOT-563 V -50V CC SC-107C I -100mA C(MAX.) R 10k 1 R EMT6 10k 2 llFeatures llInner circuit 1)Two DTA114E chips in a EMT6 package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMB11 FHA 1616 T2R 180 8 8000 B11 (EMT6) www.rohm.com 1/5 20161012 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. EMB11 FHA Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage -50 V CC Input voltage V -40 to 10 V IN Output current I -50 mA O *1 I Collector current -100 mA C(MAX) *2*3 P Power dissipation 150 mW/TOTAL D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -10mA -3 - - I(on) O O V Output voltage I = -10mA, I = -0.5mA - -100 -300 mV O(on) O I I Input current V = -5V - - -880 A I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I DC current gain G V = -5V, I = -5mA 30 - - - I O O Input resistance R - 7 10 13 k 1 Resistance ratio R /R - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land *3 120mW per element must not be exceeded. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/5 20161012 - Rev.001