X-On Electronics has gained recognition as a prominent supplier of EMB11T2R Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMB11T2R Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

EMB11T2R ROHM

Hot EMB11T2R electronic component of ROHM
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See Product Specifications
Part No.EMB11T2R
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL PNP 50V 50MA
Datasheet: EMB11T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
420: USD 0.1021 ea
Line Total: USD 42.88 
Availability - 2037
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 420  Multiples: 1
Pack Size: 1
Availability Price Quantity
11202
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2508
10 : USD 0.1958
100 : USD 0.11
1000 : USD 0.0913
8000 : USD 0.0902

2037
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 420
Multiples : 1
420 : USD 0.1021
500 : USD 0.0989
1000 : USD 0.0741
2000 : USD 0.0721

1615
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 758
Multiples : 1
758 : USD 0.1296
1000 : USD 0.1254

7760
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 758
Multiples : 1
758 : USD 0.3325

7760
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 758
Multiples : 1
758 : USD 0.1296
1000 : USD 0.1254
2500 : USD 0.1217
5000 : USD 0.1184

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
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Series
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Brand
Pd - Power Dissipation
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We are delighted to provide the EMB11T2R from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMB11T2R and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMB11 / UMB11N / IMB11A General purpose (dual digital transistors) Datasheet llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V -50V CC I -100mA C(MAX.) R 10k 1 EMB11 UMB11N R 10k (EMT6) (UMT6) 2 SOT-457 llFeatures 1)Two DTA114E chips in a EMT or UMT or SMT package. IMB11A 2)Mounting possible with EMT3 or UMT3 or (SMT6) SMT3 automatic mounting machines. 3)Transistor elements are independent, llInner circuit eliminating interference. 4)Mounting cost and area can be cut in half. EMB11 / UMB11N IMB11A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMB11 1616 T2R 180 8 8000 B11 (EMT6) SOT-363 UMB11N 2021 TN 180 8 3000 B11 (UMT6) SOT-457 IMB11A 2928 T110 180 8 3000 B11 (SMT6) www.rohm.com 1/7 20150925 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMB11 / UMB11N / IMB11A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -40 to 10 V IN I Output current -50 mA O *1 I Collector current -100 mA C(MAX) *2*3 P EMB11 150 D *2*3 P Power dissipation UMB11N 150 mW D *2*4 IMB11A P 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -10mA -3.0 - - I(on) O O V I = -10mA, I = -0.5mA Output voltage - -100 -300 mV O(on) O I I Input current V = -5V - - -880 A I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I G DC current gain V = -5V, I = -5mA 30 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/7 20150925 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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