MDS1526URH Magnachip

MDS1526 Single N-Channel Trench MOSFET 30V MDS1526 Single N-channel Trench MOSFET 30V, 16.1A, 11.0m General Description Features The MDS1526 uses advanced MagnaChips MOSFET V = 30V DS Technology, which provides high performance in on-state I = 16.1A V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDS1526 is suitable for DC/DC converter and < 11.0m V = 10V GS general purpose applications. < 16.4m VGS = 4.5V 100% UIL Tested 100% Rg Tested D 5(D) 6(D) 7(D) 8(D) G 4(G) 3(S) 2(S) 1(S) S o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 16.1 C o T =70 C 12.8 A C (1) Continuous Drain Current I D o (3) T =25 C 11.3 A o (3) T =70 C 9.1 A Pulsed Drain Current I 40 A DM o T =25 C 5.0 C o T =70 C 3.2 C Power Dissipation P W D o (3) T =25 C 2.5 A o (3) T =70 C 1.6 A (2) Single Pulse Avalanche Energy E 38 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 50 JA o C/W Thermal Resistance, Junction-to-Case R 24.6 JC 1 June. 2011. Version1.2 MagnaChip Semiconductor Ltd. MDS1526 Single N-Channel Trench MOSFET 30V Ordering Information Part Number Temp. Range Package Packing Quantity Rohs Status o MDS1526URH -55~150 C SOIC-8 Tape & Reel 3000 units Halogen Free o Electrical Characteristics (T = 25 C) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 30 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.3 1.9 2.7 GS(th) DS GS D V = 30V, V = 0V - - 1 DS GS Drain Cut-Off Current I DSS o T =55 C - - 5 A J Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 9A - 9.6 11.0 GS D o Drain-Source ON Resistance R T =125 C - 13.9 16.0 m DS(ON) J V = 4.5V, I = 7A - 13.7 16.4 GS D Forward Transconductance g V = 5V, I = 9A - 22 - S fs DS D Dynamic Characteristics Total Gate Charge Q 7.8 11.2 14.5 g(10V) Total Gate Charge Q 3.8 5.4 7.0 g(4.5V) V = 15.0V, I = 9A, DS D nC V = 10V GS Gate-Source Charge Q - 2.0 - gs Gate-Drain Charge Q - 1.8 - gd Input Capacitance C 485 692 900 iss V = 15.0V, V = 0V, DS GS Reverse Transfer Capacitance C 47 68 88 pF rss f = 1.0MHz Output Capacitance C 97 139 180 oss Turn-On Delay Time t - 5.9 - d(on) Rise Time t - 4.0 - r V = 10V, V = 15.0V, GS DS ns I = 9A, R = 3.0 D G Turn-Off Delay Time t - 18.6 - d(off) Fall Time t - 8.6 - f Gate Resistance R f=1 MHz 0.5 1.7 3.0 g Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 9A, V = 0V - 0.83 1.1 V SD S GS Body Diode Reverse Recovery Time t - 17.8 26.7 ns rr I = 9A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 8.9 13.3 nC rr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. E is tested at starting Tj = 25, L = 0.1mH, I = 14.8A, V = 27V, V = 10V. AS AS DD GS 3. T < 10sec 2 June. 2011. Version1.2 MagnaChip Semiconductor Ltd.