LOTNo. LOTNo. SCH1345 Power MOSFET 20V, 49m , 4.5A, Single P-Channel This low-profile high-power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to www.onsemi.com minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 1.5V drive 49m 4.5V ESD Diode-Protected Gate 64m 2.5V 20V 4.5A Pb-Free, Halogen Free and RoHS compliance 85m 1.8V 120m 1.5V Typical Applications Load Switch LCD Drive Switch ELECTRICAL CONNECTION P-Channel SPECIFICATIONS 1,2,5,6 ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter SymbolValue Unit Drain to Source Voltage V 20 V DSS 1:Drain Gate to Source Voltage V 10 V 2:Drain GSS 3:Gate 3 Drain Current (DC) I 4.5 A D 4:Source 5:Drain Drain Current (Pulse) I 18 A DP 6:Drain PW 10s, duty cycle 1% 4 Power Dissipation When mounted on ceramic substrate P 1 W D 2 (900mm 0.8mm) Junction Temperature Tj 150 C PACKING TYPE : TL MARKING Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not YW be assumed, damage may occur and reliability may be affected. TL THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit ORDERING INFORMATION Junction to Ambient See detailed ordering and shipping When mounted on ceramic substrate R 125 C/W JA information on page 5 of this data sheet. 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : November 2015 - Rev. 2 SCH1345/D SCH1345 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I =1mA 0.4 1.3 V GS DS D Forward Transconductance g V =10V, I =2A 6 S FS DS D R (on)1 I =2A, V =4.5V 42 49m DS D GS 53 64 R (on)2 I =1A, V =2.5V m Static Drain to Source On-State DS D GS Resistance R (on)3 I =0.5A, V =1.8V 65 85 m DS D GS R (on)4 I =0.5A, V =1.5V 74 120 m DS D GS Input Capacitance Ciss 1220 pF Output Capacitance Coss 82 pF V =10V, f=1MHz DS Reverse Transfer Capacitance Crss 72 pF Turn-ON Delay Time t (on) 8.8 ns d Rise Time 35 ns t r See specified Test Circuit Turn-OFF Delay Time 123 ns t (off) d Fall Time t 61 ns f Total Gate Charge Qg 11 nC Gate to Source Charge Qgs 1.9 nC V =10V, V =4.5V, I =4.5A DS GS D Gate to Drain Miller Charge Qgd 1.9 nC V Forward Diode Voltage SD I =4.5A, V=0V 0.82 1.2 V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =--10V V IN DD 0V --4.5V I =--2A D V IN R =5 L D V OUT PW=10s D.C.1% G SCH1345 P.G 50 S www.onsemi.com 2