LOTNo. LOTNo. SCH1439 Power MOSFET 30V, 72m , 3.5A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to www.onsemi.com minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features V R (on) Max I Low On-Resistance DSS DS D Max 4V drive 72m 10V 30V 110m 4.5V 3.5A ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance 128m 4V Ultra small package SCH6 (1.6mm1.6mm0.56mmt) ELECTRICAL CONNECTION Typical Applications N-Channel Load Switch 1,2,5,6 Battery Switch SPECIFICATIONS 1:Drain ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 2:Drain Parameter Symbol Value Unit 3 3:Gate 4:Source Drain to Source Voltage V 30 V DSS 5:Drain Gate to Source Voltage V 20 V GSS 6:Drain Drain Current (DC) I 3.5 A 4 D Drain Current (Pulse) I 14 A DP PW 10 s, duty cycle 1% PACKING TYPE : TL MARKING Power Dissipation When mounted on ceramic substrate P 1 W D ZQ 2 (900mm 0.8mm) Junction Temperature Tj 150 C TL Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction to Ambient When mounted on ceramic substrate R 125 C/W JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : September 2015 - Rev. 2 SCH1439/D SCH1439 ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V = 16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 1.2 2.6 V GS DS D Forward Transconductance g V =10V, I=1.5A 1.8 S FS DS D R (on)1 I =1.5A, V=10V 55 72 m DS D GS Static Drain to Source On-State 78 110 R (on)2 I =1A, V =4.5V m DS D GS Resistance R (on)3 I =1A, V =4V 91 128 m DS D GS Input Capacitance Ciss 280 pF Output Capacitance Coss 60 pF V =10V, f=1MHz DS Reverse Transfer Capacitance Crss 30 pF Turn-ON Delay Time t (on) 5.8 ns d Rise Time t 8.0 ns r See specified Test Circuit Turn-OFF Delay Time 21 ns t (off) d Fall Time 9.7 ns t f Total Gate Charge Qg 5.6 nC Gate to Source Charge Qgs 1.2 nC V =15V, V =10V, I =3.5A DS GS D Gate to Drain Miller Charge Qgd 0.8 nC Forward Diode Voltage V SD I =3.5A, V=0V 0.84 1.2 V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =15V V IN DD 10V 0V I =1.5A D V IN R =10 L V D OUT PW=10 s D.C.1% G SCH1439 P.G 50 S www.onsemi.com 2