X-On Electronics has gained recognition as a prominent supplier of SCT2160KEC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT2160KEC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SCT2160KEC ROHM

SCT2160KEC electronic component of ROHM
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See Product Specifications
Part No.SCT2160KEC
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET FET: 1200V 20A 160mOhm
Datasheet: SCT2160KEC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 11.7969 ea
Line Total: USD 94.38 
Availability - 0
MOQ: 8  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 16.263
10 : USD 14.9491

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 30
Multiples : 30
30 : USD 11.4525

0
Ship by Fri. 29 Nov to Thu. 05 Dec

Multiples : 360

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 16.5132
10 : USD 15.1848
25 : USD 14.5476
100 : USD 12.8196

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3
Multiples : 1
3 : USD 13.0588

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 8
Multiples : 1
8 : USD 11.7969
10 : USD 10.2633
25 : USD 9.994
100 : USD 9.7941

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3
Multiples : 1
3 : USD 13.3541

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCT2160KEC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT2160KEC and other electronic components in the MOSFETs category and beyond.

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SCT2160KE Datasheet N-channel SiC power MOSFET lOutline TO-247 V 1200V DSS TO-247N R (Typ.) 160m DS(on) I 22A D (3) P (2) 165W (1) D lInner circuit lFeatures (1) Gate 1) Low on-resistance (2) Drain 2) Fast switching speed (3) Source 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel *1 5) Simple to drive lPackaging specifications TO-247 TO-247N 6) Pb-free lead plating RoHS compliant Package Packing Tube Reel size (mm) - lApplication Tape width (mm) - Solar inverters Type Basic ordering unit (pcs) 30 DC/DC converters Packing code C C11 Induction heating Marking SCT2160KE Motor drives lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Value Unit V Drain - Source voltage 1200 V DSS *2 T = 25C 22 A I c D Continuous drain current *2 T = 100C I 16 A c D *3 Pulsed drain current 55 A I D,pulse V Gate - Source voltage (DC) -6 to 22 V GSS *4 Gate - Source surge voltage (T 300nsec) V -10 to 26 V surge GSS-surge Power dissipation (T = 25C) P 165 W c D T Junction temperature 175 C j Range of storage temperature T -55 to +175 C stg www.rohm.com TSQ50210-SCT2160KE 2019 ROHM Co., Ltd. All rights reserved. TSZ2211114001 1/12 22.Feb.2019 - Rev.002Datasheet SCT2160KE lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 1200 - - V (BR)DSS GS D voltage V = 1200V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 A DSS j drain current T = 150C - 2 - j Gate - Source leakage current I V = +22V, V = 0V - - 100 nA GSS+ GS DS I V = -6V, V = 0V Gate - Source leakage current - - -100 nA GS DS GSS- Gate threshold voltage V V = V , I = 2.5mA 1.6 2.8 4.0 V GS (th) DS GS D lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.70 0.91 C/W thJC R Thermal resistance, junction - ambient - - 50 C/W thJA Soldering temperature, wavesoldering for 10s T - - 265 C sold lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R 9.61E-02 C 1.55E-03 th1 th1 R C 4.04E-01 K/W 5.23E-03 Ws/K th2 th2 R C 1.96E-01 8.33E-02 th3 th3 www.rohm.com TSQ50210-SCT2160KE 2019 ROHM Co., Ltd. All rights reserved. 2/12 22.Feb.2019 - Rev.002 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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