X-On Electronics has gained recognition as a prominent supplier of SCT3022KLGC11 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3022KLGC11 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3022KLGC11 ROHM

SCT3022KLGC11 electronic component of ROHM
SCT3022KLGC11 ROHM
SCT3022KLGC11 SiC MOSFETs
SCT3022KLGC11  Semiconductors

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See Product Specifications
Part No. SCT3022KLGC11
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs Nch 1200V 95A SiC TO-247N
Datasheet: SCT3022KLGC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 41.802 ea
Line Total: USD 41.8 
Availability - 393
Ship by Thu. 10 Apr to Mon. 14 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
393
Ship by Thu. 10 Apr to Mon. 14 Apr
MOQ : 1
Multiples : 1
1 : USD 41.802
25 : USD 40.1955
450 : USD 40.1848

108
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 1
Multiples : 1
1 : USD 62.4916
5 : USD 62.1144
10 : USD 59.6045
50 : USD 59.3627

436
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 1
Multiples : 1
1 : USD 121.2925
2 : USD 116.9308
3 : USD 113.2058
5 : USD 105.7689
10 : USD 103.0971
20 : USD 100.768
50 : USD 98.7272
100 : USD 96.931
250 : USD 95.3438

392
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 1
Multiples : 1
1 : USD 121.2925
2 : USD 116.9308
3 : USD 113.2058
5 : USD 105.7689
10 : USD 103.0971
20 : USD 100.768
50 : USD 98.7272
100 : USD 96.931
250 : USD 95.3438

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Configuration
Package / Case
Packaging
Series
Technology
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SCT3022KLGC11 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3022KLGC11 and other electronic components in the SiC MOSFETs category and beyond.

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SCT3022KL Datasheet N-channel SiC power MOSFET lOutline TO-247N V 1200V DSS R (Typ.) 22mW DS(on) I 95A D (3) P 427W (2) D (1) lInner circuit lFeatures (1) Gate (2) Drain 1) Low on-resistance (3) Source 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery 4) Easy to parallel lPackaging specifications 5) Simple to drive Packing Tube 6) Pb-free lead plating RoHS compliant Reel size (mm) - Tape width (mm) - Type lApplication Basic ordering unit (pcs) 30 Solar inverters Taping code C11 DC/DC converters Marking SCT3022KL Switch mode power supplies Induction heating Motor drives lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 1200 V DSS *1 T = 25C I 95 A c D Continuous drain current *1 T = 100C I 67 A c D *2 Pulsed drain current 237 A I D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate-Source Surge Voltage (t < 300nsec) V V -4 to +26 surge GSS surge *4 Recommended Drive Voltage V 0 / +18 V GS op T Junction temperature 175 C j Range of storage temperature T C -55 to +175 stg www.rohm.com TSQ50211-SCT3022KL 2018 ROHM Co., Ltd. All rights reserved. 1/12 14.Jun.2018 - Rev.005 TSZ2211114001Datasheet SCT3022KL lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.27 0.35 C/W thJC lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 1200 - - V (BR)DSS GS D voltage V = 1200V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 mA DSS j drain current T = 150C - 2 - j Gate - Source leakage current I V = +22V, V = 0V - - 100 nA GSS + GS DS Gate - Source leakage current I V = -4V, V = 0V - - -100 nA GSS - GS DS V V = 10V, I = 18.2mA Gate threshold voltage 2.7 - 5.6 V GS (th) DS D V = 18V, I = 36A GS D Static drain - source *5 T = 25C R - 22 28.6 m W j DS(on) on - state resistance T = 125C - 33 - j R Gate input resistance f = 1MHz, open drain - 4 - W G www.rohm.com TSQ50211-SCT3022KL 2018 ROHM Co., Ltd. All rights reserved. 2/12 14.Jun.2018 - Rev.005 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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