Green
DMTH8012LK3Q
80V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Rated to +175C Ideal for High Ambient Temperature
I Max
D
BV R Max
DSS DS(ON)
T = +25C Environments
C
Low R Ensures On-State Losses are Minimized
DS(ON)
16m @ V = 10V 50A
GS
High Conversion Efficiency
80V
Low Input Capacitance
21m @ V = 4.5V 43A
GS
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications Mechanical Data
Case: TO252 (DPAK)
This MOSFET is designed to meet the stringent requirements of
Case Material: Molded Plastic, Green Molding Compound.
Automotive applications. It is qualified to AECQ101, supported by a
UL Flammability Classification Rating 94V-0
PPAP and is ideal for use in:
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish Matte Tin Annealed over Copper Leadframe.
Engine Management Units
Solderable per MIL-STD-202, Method 208
Motor Control
Weight: 0.33 grams (Approximate)
DC-DC Converters
TO252 (DPAK)
Top View Pin Out Top View Equivalent Circuit
Ordering Information (Note 5)
Part Number Case Packaging
DMTH8012LK3Q-13 TO252 (DPAK) 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH8012LK3Q
Marking Information
TO252 (DPAK)
=Manufacturers Marking
H8012L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
H8012L
YYWW
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage 80 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
T = +25C 50
C
Continuous Drain Current (Note 7) V = 10V I A
GS D
35
T = +100C
C
Maximum Continuous Body Diode Forward Current (Note 7) I 80 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A
DM
Avalanche Energy, L = 60mH E 147 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) 2.6 W
P
D
Thermal Resistance, Junction to Ambient (Note 6) R 47 C/W
JA
Total Power Dissipation (Note 7) P 60 W
D
Thermal Resistance, Junction to Case (Note 7) R 2.5 C/W
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package.
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DMTH8012LK3Q September 2015
Diodes Incorporated
www.diodes.com
Document number: DS38062 Rev. 1 - 2