X-On Electronics has gained recognition as a prominent supplier of SCT3040KRC14 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3040KRC14 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3040KRC14 ROHM

SCT3040KRC14 electronic component of ROHM
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See Product Specifications
Part No.SCT3040KRC14
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs TO247 1.2KV 55A N-CH SIC
Datasheet: SCT3040KRC14 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 40.625 ea
Line Total: USD 40.62 
Availability - 317
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
59
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 39.6635

232
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 2
Multiples : 1
2 : USD 89.317
3 : USD 86.2342
5 : USD 83.6048
10 : USD 81.3448
20 : USD 79.3892
50 : USD 77.6875
100 : USD 76.1991

317
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 40.625
5 : USD 33.6375
50 : USD 29.25
100 : USD 28.6
240 : USD 27.7875

227
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 2
Multiples : 1
2 : USD 89.317
3 : USD 86.2342
5 : USD 83.6048
10 : USD 81.3448
20 : USD 79.3892
50 : USD 77.6875
100 : USD 76.1991

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Configuration
Package / Case
Packaging
Series
Technology
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SCT3040KRC14 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3040KRC14 and other electronic components in the SiC MOSFETs category and beyond.

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SCT3040KR Datasheet N-channel SiC power MOSFET lOutline TO-247-4L V 1200V DSS R (Typ.) 40m DS(on) *1 I 55A D P 262W D (1) (2)(3)(4) lInner circuit lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel Please note Driver Source and Power Source are 5) Simple to drive not exchangeable. Their exchange might lead to malfunction. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packing Tube lApplication Solar inverters Reel size (mm) - DC/DC converters Tape width (mm) - Type Switch mode power supplies Basic ordering unit (pcs) 30 Induction heating Taping code C14 Motor drives Marking SCT3040KR lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source Voltage 1200 V DSS *1 T = 25C I 55 A c D Continuous Drain current *1 T = 100C 39 A I c D *2 Pulsed Drain current I 137 A D,pulse Gate - Source voltage (DC) V -4 to +22 V GSS *3 Gate - Source surge voltage (t < 300ns) V -4 to +26 V surge GSS surge *4 Recommended drive voltage V 0 / +18 V GS op Junction temperature T 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50254-SCT3040KR 2019 ROHM Co., Ltd. All rights reserved. 1/12 31.Jul.2019 - Rev.001 TSZ2211114001Datasheet SCT3040KR lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V = 0V, I = 1mA GS D Drain - Source breakdown V T = 25C 1200 - - V (BR)DSS j voltage T = -55C 1200 - - j V = 0V, V =1200V GS DS Zero Gate voltage I T = 25C - 1 10 A DSS j Drain current T = 150C - 2 - j Gate - Source I V = +22V, V = 0V - - 100 nA GSS+ GS DS leakage current Gate - Source I V = V = 0V -4V, - - -100 nA GSS- GS DS leakage current V V = 10V, I = Gate threshold voltage 10mA 2.7 - 5.6 V GS (th) DS D V = 18V, I = 20A GS D Static Drain - Source *5 T = 25C - 40 52 m R j DS(on) on - state resistance T = 150C - 68 - j R Gate input resistance f = 1MHz, open drain - 7 - G lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case R - 0.44 0.57 C/W thJC lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit -2 -3 R C 2.5610 1.3910 th1 th1 -1 -2 R 1.9510 K/W C 1.0010 Ws/K th2 th2 -1 -2 R C 2.2010 3.5710 th3 th3 R R T th,n T th1 j c P C C D C th1 th2 th,n T a www.rohm.com TSQ50254-SCT3040KR 2019 ROHM Co., Ltd. All rights reserved. 2/12 31.Jul.2019 - Rev.001 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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