X-On Electronics has gained recognition as a prominent supplier of SCT3080ALHRC11 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3080ALHRC11 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3080ALHRC11 ROHM

SCT3080ALHRC11 electronic component of ROHM
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Part No.SCT3080ALHRC11
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs 650V 30A 134W SIC 80mOhm TO-247N
Datasheet: SCT3080ALHRC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.85 ea
Line Total: USD 14.85 
Availability - 378
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
378
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 14.85
10 : USD 14.575
25 : USD 13.156
450 : USD 12.848
900 : USD 12.628

358
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2
Multiples : 1
2 : USD 22.1
5 : USD 17.225
10 : USD 16.4125
50 : USD 14.43
100 : USD 13.2275
200 : USD 12.6912

428
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 6
Multiples : 1
6 : USD 18.1672
10 : USD 17.148
50 : USD 16.6894
100 : USD 15.0205

436
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 6
Multiples : 1
6 : USD 16.7055
25 : USD 15.9342
50 : USD 15.2929
100 : USD 14.7538
250 : USD 14.2962

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Package / Case
Hts Code
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We are delighted to provide the SCT3080ALHRC11 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3080ALHRC11 and other electronic components in the SiC MOSFETs category and beyond.

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SCT3080ALHR Automotive Grade N-channel SiC power MOSFET Datasheet lOutline TO-247N V 650V DSS R (Typ.) 80m DS(on) *1 30A I D P (3) 134W (2) D (1) lInner circuit lFeatures (1) Gate 1) Qualified to AEC-Q101 (2) Drain (3) Source 2) Low on-resistance *Body Diode 3) Fast switching speed 4) Fast reverse recovery Please note Driver Source and Power Source are 5) Easy to parallel not exchangeable. Their exchange might lead to malfunction. 6) Simple to drive 7) Pb-free lead plating RoHS compliant lPackaging specifications Tube Packing lApplication Automobile Reel size (mm) - Switch mode power supplies Tape width (mm) - Type Basic ordering unit (pcs) 30 Taping code C11 Marking SCT3080AL lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source Voltage V 650 V DSS *1 T = 25C I 30 A c D Continuous Drain current *1 T = 100C I 21 A c D *2 Pulsed Drain current I 75 A D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate - Source surge voltage (t < 300nsec) -4 to +26 V V surge GSS surge *4 Recommended drive voltage V 0 / +18 V GS op T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50211-SCT3080ALHR 2018 ROHM Co., Ltd. All rights reserved. 1/12 16.Nov.2018 - Rev.001 TSZ22111 14001SCT3080ALHR Datasheet lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V = 0V, I = 1mA GS D Drain - Source breakdown V T = 25C 650 - - V (BR)DSS j voltage T = -55C 650 - - j V = 0V, V =650V GS DS Zero Gate voltage I T = 25C - 1 10 A DSS j Drain current T = 150C - 2 - j I V = , V = 0V Gate - Source leakage current +22V - - 100 nA GSS+ GS DS Gate - Source leakage current I V = -4V , V = 0V - - -100 nA GSS- GS DS V V = 10V, I = Gate threshold voltage 5mA 2.7 - 5.6 V GS (th) DS D V = 18V, I = 10A GS D Static Drain - Source *5 T = 25C R - 80 104 m j DS(on) on - state resistance T = 150C - 115 - j Gate input resistance R f = 1MHz, open drain - 13 - G lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.86 1.12 C/W thJC lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R C 1.17E-01 6.82E-04 th1 th1 R C 7.29E-01 K/W 5.28E-03 Ws/K th2 th2 R C 1.30E-02 6.78E-01 th3 th3 R R T th,n T th1 j c P C C D C th1 th2 th,n T a www.rohm.com TSQ50211-SCT3080ALHR 2018 ROHM Co., Ltd. All rights reserved. 2/12 16.Nov.2018 - Rev.001 TSZ22111 15001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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