X-On Electronics has gained recognition as a prominent supplier of SCT3105KLGC11 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3105KLGC11 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3105KLGC11 ROHM

SCT3105KLGC11 electronic component of ROHM
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See Product Specifications
Part No.SCT3105KLGC11
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs Nch 1200V 24A SiC TO-247N
Datasheet: SCT3105KLGC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 20.8035 ea
Line Total: USD 20.8

Availability - 422
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
153
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 15.4675
25 : USD 13.938

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Package / Case
Hts Code
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We are delighted to provide the SCT3105KLGC11 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3105KLGC11 and other electronic components in the SiC MOSFETs category and beyond.

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SCT3105KL N-channel SiC power MOSFET Datasheet lOutline TO-247N V 1200V DSS R (Typ.) 105m DS(on) I 24A D (3) P 134W (2) D (1) lInner circuit lFeatures (1) Gate (2) Drain 1) Low on-resistance (3) Source 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery 4) Easy to parallel lPackaging specifications 5) Simple to drive Packing Tube 6) Pb-free lead plating RoHS compliant Reel size (mm) - Tape width (mm) - Type lApplication Basic ordering unit (pcs) 30 Solar inverters Taping code C11 DC/DC converters Marking SCT3105KL Switch mode power supplies Induction heating Motor drives lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 1200 V DSS *1 T = 25C 24 A I c D Continuous drain current *1 T = 100C I 17 A c D *2 Pulsed drain current 60 A I D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate - Source Surge Voltage (t < 300nsec) V -4 to +26 V surge GSS surge *4 Recommended Drive Voltage 0 / +18 V V GS op T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50211-SCT3105KL 2018 ROHM Co., Ltd. All rights reserved. 1/12 14.Jun.2018 - Rev.002 TSZ2211114001Datasheet SCT3105KL lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case R - 0.86 1.12 C/W thJC lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 1200 - - V (BR)DSS GS D voltage V = 1200V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 A DSS j drain current T = 150C - 2 - j I V = +22V, V = 0V Gate - Source leakage current - - 100 nA GSS + GS DS Gate - Source leakage current I V = -4V, V = 0V - - -100 nA GSS - GS DS V V = 10V, I = 3.81mA Gate threshold voltage 2.7 - 5.6 V GS (th) DS D V = 18V, I = 7.6A GS D Static drain - source *5 T = 25C R - 105 137 m j DS(on) on - state resistance T = 125C - 158 - j R Gate input resistance f = 1MHz, open drain - 13 - G www.rohm.com TSQ50211-SCT3105KL 2018 ROHM Co., Ltd. All rights reserved. 2/12 14.Jun.2018 - Rev.002 TSZ2211114001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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