HP8K24 Datasheet 30V Nch+Nch Middle Power MOSFET llOutline Tr1:Nch Tr2:Nch Symbol V 30V 30V DSS HSOP8 R (Max.) 8.8m 3.0m DS(on) I 27A 80A D P 22W 31W D llFeatures llInner circuit 1) Low on - resistance. 2) Pb-free lead plating RoHS compliant. 3) Halogen Free. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type DC/DC Converter Basic ordering unit (pcs) 2500 Taping code TB Marking HP8K24 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Nch V Drain - Source voltage 30 30 V DSS *1 I 27 80 A D Continuous drain current I 15 26 A D *2 I Pulsed drain current 60 80 A DP Gate - Source voltage V 20 20 V GSS *3 I Avalanche current, single pulse 15 26 A AS *3 Avalanche energy, single pulse E 16.5 51.2 mJ AS *1 P element 22 31 W D Power dissipation *4 total P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/16 20160627 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. HP8K24 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Tr1:Nch - - 5.6 /W thJC Thermal resistance, junction - case *1 R Tr2:Nch - - 4.0 /W thJC *4 R Thermal resistance, junction - ambient total - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. V = 0V, I = 1mA Tr1 30 - - GS D Drain - Source breakdown V V (BR)DSS voltage V = 0V, I = 1mA Tr2 30 - - GS D V I = 1mA, referenced to 25 Tr1 - 28 - (BR)DSS D Breakdown voltage mV/ temperature coefficient T I = 1mA, referenced to 25 j Tr2 - 28 - D V = 24V, V = 0V Tr1 - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = 24V, V = 0V - - 1 DS GS Tr1 V = 0V, V = 20V - - 100 DS GS Gate - Source I nA GSS leakage current Tr2 V = 0V, V = 20V - - 100 DS GS Tr1 V = V , I = 1mA 1.3 - 2.5 DS GS D Gate threshold V V GS(th) voltage V = V , I = 1mA Tr2 1.3 - 2.5 DS GS D V I = 1mA, referenced to 25 Tr1 - -3.87 - D GS(th) Gate threshold voltage mV/ temperature coefficient T I = 1mA, referenced to 25 Tr2 - -3.87 - j D V = 10V, I = 15A - 6.7 8.8 GS D Tr1 V = 4.5V, I = 15A - 9.1 13.3 GS D Static drain - source *5 R m DS(on) on - state resistance V = 10V, I = 26A - 2.3 3.0 GS D Tr2 V = 4.5V, I = 26A - 3.2 4.2 GS D Tr1 1.15 2.3 4.6 Gate resistance R f=1MHz, open drain G Tr2 0.6 1.1 2.2 Tr1 V = 5V, I = 15A 10 - - DS D Forward Transfer *5 Y S fs Admittance Tr2 V = 5V, I = 26A 27 - - DS D *1Tc=25 , Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/16 20160627 - Rev.001