X-On Electronics has gained recognition as a prominent supplier of HP8M31TB1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HP8M31TB1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HP8M31TB1 ROHM

HP8M31TB1 electronic component of ROHM
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See Product Specifications
Part No.HP8M31TB1
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 60V NCH+PCH POWER
Datasheet: HP8M31TB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.794 ea
Line Total: USD 2.79 
Availability - 4042
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4042
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 2.794
10 : USD 1.98
100 : USD 1.496
250 : USD 1.43
500 : USD 1.21
1000 : USD 1.122
2500 : USD 1.0956
5000 : USD 1.0736

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the HP8M31TB1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HP8M31TB1 and other electronic components in the MOSFETs category and beyond.

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HP8M31 Datasheet 60V Nch+Pch Power MOSFET llOutline Tr1:Nch Tr2:Pch Symbol V 60V -60V DSS HSOP8 R (Max.) 65m 70m DS(on) I 8.5A 8.5A D P 7.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 motor Tape width (mm) 12 Type Quantity (pcs) 2500 Taping code TB1 Marking HP8M31 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 60 -60 V DSS *1 I Continuous drain current 8.5 8.5 A D *2 I Pulsed drain current 18 18 A DP V Gate - Source voltage 20 20 V GSS *3 I Avalanche current, single pulse 8.5 -8.5 A AS *3 E Avalanche energy, single pulse 5.4 10 mJ AS *1 P 7.0 D Power dissipation total W *4 P 3.0 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/19 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. HP8M31 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. Tr1 V = 0V, I = 1mA 60 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = -1mA -60 - - GS D V I = 1mA, referenced to 25 (BR)DSS Tr1 D - 63.7 - Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 - -60 - D Tr1 V = 60V, V = 0V - - 1.0 DS GS Zero gate voltage I A DSS drain current Tr2 V = -60V, V = 0V - - -1.0 DS GS Tr1 V = 20V, VDS = 0V - - 10 GS Gate - Source I A GSS leakage current Tr2 V = 20V, VDS = 0V - - 10 GS Tr1 V = 10V, I = 1mA 1.0 - 3.0 DS D Gate threshold V V GS(th) voltage Tr2 V = 10V, I = -1mA -1.0 - -3.0 DS D V I = 1mA, referenced to 25 Tr1 D - -4.4 - GS(th) Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 D - 3.0 - V = 10V, I = 8.5A - 46 65 GS D Tr1 V = 4.5V, I = 8.5A - 52 73 GS D Static drain - source *5 R m DS(on) on - state resistance V = -10V, I = -8.5A - 50 70 GS D Tr2 V = -4.5V, I = -8.5A - 55 80 GS D Tr1 - 5.8 - R Gate resistance f=1MHz, open drain G Tr2 - 4.0 - Tr1 V = 5V, I = 8.5A 3.0 - - DS D Forward Transfer *5 Y S fs Admittance Tr2 V = -5V, I = -8.5A 6.5 - - DS D *1 Pw 1s, Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Tr1: L 0.1mH, V = 30V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j Tr2: L 0.2mH, V = -30V, R = 25, Starting T = 25 Fig.6-1,6-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/19 20190527 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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