X-On Electronics has gained recognition as a prominent supplier of IMB10AT110 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. IMB10AT110 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

IMB10AT110 ROHM

IMB10AT110 electronic component of ROHM
IMB10AT110 ROHM
IMB10AT110 Bipolar Transistors - Pre-Biased
IMB10AT110 Semiconductors

Images are for reference only
See Product Specifications
Part No. IMB10AT110
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased DUAL PNP 50V 100MA SOT-457
Datasheet: IMB10AT110 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4554 ea
Line Total: USD 0.46 
Availability - 2910
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ: 1  Multiples: 1
Pack Size: 1

 IMB10AT110 More Buying Options & Price Grid(s)

Availability Price Quantity
2910
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4554
10 : USD 0.2849
100 : USD 0.1441
1000 : USD 0.1309
3000 : USD 0.1001
9000 : USD 0.0935
24000 : USD 0.0902

2900
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 417
Multiples : 1
417 : USD 0.2445
500 : USD 0.2357
1000 : USD 0.228
2500 : USD 0.2212

2895
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 658
Multiples : 1
658 : USD 0.1493
1000 : USD 0.1444
2500 : USD 0.1401

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IMB10AT110 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMB10AT110 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

EMB10 / UMB10N / IMB10A General purpose (dual digital transistor) Datasheet llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V -50V CC I -100mA C(MAX.) R 2.2k 1 EMB10 UMB10N R 47k (EMT6) (UMT6) 2 SOT-457 llFeatures 1)Two DTA123J chips in a EMT or UMT or SMT package. IMB10A 2)Mounting possible with EMT3 or UMT3 or (SMT6) SMT3 automatic mounting machines. 3)Transistor elements are independent, llInner circuit eliminating interference. 4)Mounting cost and area can be cut in half. EMB10 / UMB10N IMB10A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMB10 1616 T2R 180 8 8000 B10 (EMT6) SOT-363 UMB10N 2021 TN 180 8 3000 B10 (UMT6) SOT-457 IMB10A 2928 T110 180 8 3000 B10 (SMT6) www.rohm.com 1/7 20150919 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMB10 / UMB10N / IMB10A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -12 to 5 V IN I Output current -100 mA O *1 I Collector current -100 mA C(MAX) *2*3 P EMB10 150 D *2*3 P Power dissipation UMB10N 150 mW D *2*4 IMB10A P 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -5mA -1.1 - - I(on) O O V I = -5mA, I = -0.25mA Output voltage - -100 -300 mV O(on) O I I Input current V = -5V - - -3.6 mA I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I G DC current gain V = -5V, I = -10mA 80 - - - I O O R Input resistance - 1.54 2.2 2.86 k 1 R /R Resistance ratio - 17 21 26 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/7 20150919 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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