X-On Electronics has gained recognition as a prominent supplier of HP8MA2TB1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HP8MA2TB1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HP8MA2TB1 ROHM

Name: HP8MA2TB1
Brand: ROHM
SKU: HP8MA2TB1_ROHM
Availability: InStock
Rating: 5 (11 reviews)

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Part No.	HP8MA2TB1
Manufacturer:	ROHM
Category:	MOSFETs
Description:	MOSFET 30V NCH+PCH MIDDLE POWER
Datasheet:	HP8MA2TB1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.9001 ea
Line Total: USD 0.9

Availability - 10
Ship by Fri. 25 Apr to Wed. 30 Apr

MOQ: 1 Multiples: 1
Pack Size: 1

HP8MA2TB1 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

10

Ship by Fri. 25 Apr to Wed. 30 Apr

MOQ : 1
Multiples : 1

1 : USD 0.9001
10 : USD 0.7311
30 : USD 0.5521
100 : USD 0.4317
500 : USD 0.3932
1000 : USD 0.3721

1724

Ship by Wed. 16 Apr to Fri. 18 Apr

MOQ : 1
Multiples : 1

1 : USD 1.9386
10 : USD 1.4392
100 : USD 1.0599
250 : USD 1.0497
500 : USD 0.8894
1000 : USD 0.8848
2500 : USD 0.8495

Specifications

Manufacturer

ROHM ROHM

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

18 A , 15 A 18 A , 15 A

Vds - Drain-Source Breakdown Voltage

30 V 30 V

Rds On - Drain-Source Resistance

9.6 mOhms , 17.9 mOhms 9.6 mOhms , 17.9 mOhms

Transistor Polarity

N - Channel, P - Channel N - Channel, P - Channel

Vgs th - Gate-Source Threshold Voltage

1 V 1 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

7 W 7 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

HSOP - 8 HSOP - 8

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

2 Channel 2 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

22 nC , 25 nC 22 nC , 25 nC

Channel Mode

Enhancement Enhancement

Configuration

Dual Dual

Transistor Type

1 N - Channel, 1 P - Channel 1 N - Channel, 1 P - Channel

Brand

Rohm Semiconductor Rohm Semiconductor

Fall Time

14 ns , 60 ns 14 ns , 60 ns

Product Type

Mosfet Mosfet

Rise Time

12 ns , 14 ns 12 ns , 14 ns

Factory Pack Quantity :

2500 2500

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

46 ns , 73 ns 46 ns , 73 ns

Typical Turn-On Delay Time

14 ns , 9.4 ns 14 ns , 9.4 ns

Notes:- Show Stocked Products With Similar Attributes.

HP8MA2TB1 Alternative Parts

We are delighted to provide the HP8MA2TB1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HP8MA2TB1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HP8MA2TB1 with MOSFET 30V NCH+PCH MIDDLE POWER is a power switching device designed and manufactured by ROHM. This part is a dual MOSFET (N- and P-Channel) housed in the SSOP package. The maximum drain current of N-channel and P-channel MOSFET are 9A and 8.5A respectively. The MOSFET has common source, gate and drain terminals and is capable of switching at a power of up to 30V. The part is designed for moderate power switching applications, suitable for controlling inductive loads such as motors, and offers designers and system manufacturers an excellent balance between performance and efficiency. The part is designed for thermal and noise performance making it an ideal solution for automotive applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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Availability	Price	Buy Price	Quantity
10 Ship by Fri. 25 Apr to Wed. 30 Apr MOQ : 1 Multiples : 1	1 : USD 0.9001 10 : USD 0.7311 30 : USD 0.5521 100 : USD 0.4317 500 : USD 0.3932 1000 : USD 0.3721

1724 Ship by Wed. 16 Apr to Fri. 18 Apr MOQ : 1 Multiples : 1	1 : USD 1.9386 10 : USD 1.4392 100 : USD 1.0599 250 : USD 1.0497 500 : USD 0.8894 1000 : USD 0.8848 2500 : USD 0.8495

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