X-On Electronics has gained recognition as a prominent supplier of RS1E281BNTB1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS1E281BNTB1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS1E281BNTB1 ROHM

RS1E281BNTB1 electronic component of ROHM
RS1E281BNTB1 ROHM
RS1E281BNTB1 MOSFETs
RS1E281BNTB1  Semiconductors

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See Product Specifications
Part No. RS1E281BNTB1
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 30 V 28A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP
Datasheet: RS1E281BNTB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.3484 ea
Line Total: USD 3.35 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 2500
Multiples : 2500
2500 : USD 1.0108

0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 1
Multiples : 1
1 : USD 2.2051
10 : USD 1.9045
100 : USD 1.5311
500 : USD 1.2579
1000 : USD 1.0423

0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 1
Multiples : 1
1 : USD 2.2051
10 : USD 1.9045
100 : USD 1.5311
500 : USD 1.2579
1000 : USD 1.0423

0
Ship by Tue. 22 Apr to Fri. 25 Apr
MOQ : 1
Multiples : 1
1 : USD 3.3484
10 : USD 2.7992
30 : USD 2.4774
100 : USD 2.4356

0
Ship by Fri. 11 Apr to Tue. 15 Apr
MOQ : 2500
Multiples : 2500
2500 : USD 0.9249
5000 : USD 0.9126
10000 : USD 0.9126

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RS1E281BNTB1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1E281BNTB1 and other electronic components in the MOSFETs category and beyond.

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RS1E281BN Nch 30V 80A Power MOSFET Datasheet llOutline V 30V DSS R (Max.) 2.3m DS(on) HSOP8 I 80A D P 30W D llInner circuit llFeatures 1) Low on - resistance 2) High Power small mold Package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB1 Marking RS1E281BN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 80 A c D Continuous drain current T = 25C I 28 A a D *2 I Pulsed drain current 112 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 48 A AS *3 E Avalanche energy, single pulse 190 mJ AS *1 P 30 W D Power dissipation *4 P 3 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20171215 - Rev.001 RS1E281BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 4.2 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 16V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 28A - 1.7 2.3 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 28A - 2.3 3.2 GS D R Gate resistance f=1MHz, open drain - 1.0 - G Forward Transfer *5 Y V = 5V, I = 28A 20 - - S fs DS D Admittance *1 Tc=25 , Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.05mH, V = 24V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu Board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20171215 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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