X-On Electronics has gained recognition as a prominent supplier of RS1E350GNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS1E350GNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS1E350GNTB ROHM

RS1E350GNTB electronic component of ROHM
RS1E350GNTB ROHM
RS1E350GNTB MOSFETs
RS1E350GNTB  Semiconductors

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See Product Specifications
Part No. RS1E350GNTB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET NCH 30V 80A POWER
Datasheet: RS1E350GNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.725 ea
Line Total: USD 2.72 
Availability - 836
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
836
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 2.725
10 : USD 2.004
100 : USD 1.397
500 : USD 1.243
1000 : USD 1.199
2500 : USD 1.188
10000 : USD 1.177

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RS1E350GNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1E350GNTB and other electronic components in the MOSFETs category and beyond.

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RS1E350GN Datasheet Nch 30V 80A Power MOSFET llOutline V 30V DSS R (Max.) 1.76m DS(on) HSOP8 I 80A D P 39W D llInner circuit llFeatures 1) Low on - resistance 2) High power package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB Marking RS1E350GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 80 A c D Continuous drain current T = 25C I 35 A a D *2 I Pulsed drain current 140 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 35 A AS *3 E Avalanche energy, single pulse 92 mJ AS *1 P 39 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.004 RS1E350GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 3.2 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 28 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = V , I = 1mA 1.2 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3.87 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 35A - 1.48 1.76 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 35A - 1.92 2.40 GS D R Gate resistance f=1MHz, open drain - 1.5 - G Forward Transfer *5 Y V = 5V, I = 35A 40.0 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu boad (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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