RSJ451N04FRATL ROHM

RSJ451N04FRA Datasheet Nch 40V 45A Power MOSFET llOutline TO-263 V 40V DSS SC-83 R (Max.) 13.5m DS(on) LPT(S) I 45A D P 50W D llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) High power small mold package 4) Pb-free lead plating RoHS compliant. 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Quantity (pcs) 1000 Taping code TL Marking RSJ451N04 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 40 V DSS *1 A I 45 Continuous drain current D *2 I Pulsed drain current 90 A DP V Gate - Source voltage 20 V GSS *1 P Power dissipation 50 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RSJ451N04FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 Thermal resistance, junction - case R - - 2.5 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V , I = 1mA 1.2 - 3.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j Static drain - source *3 R V = 10V, I = 25A - 9.5 13.5 m DS(on) GS D on - state resistance Gate resistance R f = 1MHz, open drain - 3.2 - G Forward Transfer *3 Y V = 10V, I = 25A 10 - - S fs DS D Admittance *1 Tc=25 , Limited only by maximum temperature allowed. *2 Pw10s, Duty cycle 1% *3 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.