Data Sheet 4V Drive Nch MOSFET RSJ650N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS TO-263(D2PAK) 10.1 4.5 1.3 Features 1) Low on-resistance. 1.24 2) High power package. 2.54 0.4 0.78 3) 4V drive. 5.08 2.7 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Taping 1 Type Code TL Quantity (pcs) 1000 2 RSJ650N10 (1) (2) (3) (1) Gate (2) Drain 1 ESD PROTECTION DIODE (3) Source 2 BODY DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 V GSS Continuous I *3 65 A D Drain current *1 Pulsed I 130 A DP Continuous I *3 65 A Source current S (Body Diode) *1 Pulsed I 130 A SP *2 Power dissipation P 100 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 P 10s, Duty cycle1% W *2 T =25C C *3 Please use within the range of SOA. Thermal resistance Parameter Symbol Limits Unit * Channel to Case Rth (ch-c) 1.25 C / W * T =25C C www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.A 1/6 13.1 3.0 9.0 1.0 1.2Data Sheet RSJ650N10 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 100 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =100V, V =0V DSS DS GS Gate threshold voltage V 1 - 2.5 V V =10V, I =1mA GS (th) DS D - 6.5 9.1 I =32.5A, V =10V Static drain-source on-state D GS * R m DS (on) resistance - 7 9.8 I =32.5A, V =4V D GS ** Forward transfer admittance l Y l45 - - S V =10V, I =32.5A fs DS D Input capacitance C - 10780 - pF V =25V iss DS Output capacitance C - 785 - pF V =0V oss GS Reverse transfer capacitance C - 560 - pF f=1MHz rss Turn-on delay time t - 45 - ns V 50V, I =32.5A ** d(on) DD D Rise time t - 170 - ns V =10V ** r GS Turn-off delay time t - 640 - ns R =1.54 d(off)** L Fall time t ** - 480 - ns R =10 f G Total gate charge Q ** - 260 - nC V 50V, I =32.5A g DD D Gate-source charge Q ** - 24 - nC V =10V gs GS Gate-drain charge Q -60 - nC ** gd *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.5 V I =65A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.06 - Rev.A