DMNH6021SPDQ 60V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature I Max D V R Max (BR)DSS DS(ON) Environments T = +25C C 32A 25m V = 10V 100% Unclamped Inductive Switching Ensures More Reliable GS 60V 40m V = 4.5V 25A GS and Robust End Application High Conversion Efficiency Low R Minimizes On-State Losses DS(ON) Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: PowerDI 5060-8 (Type C) Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic,Gree Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D2 D1 S1 D1 G1 D1 D2 G2 S2 G1 D2 G2 Pin1 S2 S1 Pin Out Top View Bottom View Equivalent Circuit Top View Ordering Information (Note 5) Part Number Case Packaging DMNH6021SPDQ-13 PowerDI5060-8 (Type C) 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMNH6021SPDQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS TA = +25C 8.2 Continuous Drain Current (Note 7) V = 10V I A GS D 6.5 T = +70C A T = +25C 32 C A Continuous Drain Current (Note 8) V = 10V I GS D 22 T = +100C C Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) I 80 A DM Maximum Continuous Body Diode Forward Current (Note 8) I 32 A S Avalanche Current, L = 0.1mH (Note 9) 35 A I AS Avalanche Energy, L = 0.1mH (Note 9) 64 mJ E AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) 1.5 W P D Steady State 99 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 53 Total Power Dissipation (Note 7) 2.8 W P D Steady State 54 Thermal Resistance, Junction to Ambient (Note 7) C/W R JA t<10s 27 Thermal Resistance, Junction to Case (Note 8) 2.2 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 60V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 15 25 V = 10V, I = 15A GS D Static Drain-Source On-Resistance m R DS(ON) 21 40 V = 4.5V, I = 12A GS D Diode Forward Voltage V 0.75 1.2 V V = 0V, I = 2.6A SD GS S DYNAMIC CHARACTERISTICS (Note 11) 1,143 Input Capacitance C pF ISS V = 25V, V = 0V, DS GS 168 Output Capacitance C pF OSS f = 1MHz 69 Reverse Transfer Capacitance C pF RSS 2.1 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS 20.1 nC Total Gate Charge (V = 10V) Q GS G 12 nC Total Gate Charge (V = 6V) Q GS G V = 30V, I = 20A, DS D Gate-Source Charge 4.3 nC Q GS Gate-Drain Charge 5.5 nC Q GD Turn-On Delay Time 4.4 ns t D(ON) 6.0 Turn-On Rise Time t ns V = 30V, V = 10V, R DD GS 14.2 Turn-Off Delay Time t ns R = 4.7, I = 20A D(OFF) G D 5.4 Turn-Off Fall Time t ns F 21.2 Body Diode Reverse Recovery Time t ns RR IF=20A, di/dt=100A/s 15.2 Body Diode Reverse Recovery Charge nC Q RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed dra in pad). 9. I and E rating are based on low frequency and duty cycles to keep T = 25C AS AS J 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. 2 of 7 DMNH6021SPDQ June 2016 Diodes Incorporated www.diodes.com Document number: DS38111 Rev. 2 - 2 ADVANCE INFORMATION ADVANCED INFORMATION