RSL020P03FRA RSL020P03 Transistors AEC-Q101 Qualified 4V Drive Pch MOSFET RSL020P03FRA RSL020P03 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT6 z Features 1) Low On-resistance. 2) High speed switching. zApplications Abbreviated symbol : SL Switching z Packaging specifications z Inner circuit (6) (5) (4) Package Taping Type Code TR 3000 Quantity (pcs) 2 RSL020P03FRARSL020P03 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage V 30 V DSS Gate-source voltage VGSS 20 V Continuous ID 2 A Drain current 1 Pulsed IDP 8 A Source current Continuous I 0.8 A S 1 (Body diode) Pulsed ISP 8 A 2 Total power dissipation PD 1 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle 1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 125 C/W Mounted on a ceramic board 20190527-Rev.C 1/4 0.2Max.RSL020P03FRARSL020P03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID=1mA, VGS=0V Zero gate voltage drain current I 1 AV =30V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 80 120 m ID=2A, VGS=10V Static drain-source on-state RDS (on) 125 190 m ID=1A, VGS=4.5V resistance 140 210 m I =1A, V =4.0V D GS Forward transfer admittance Yfs 1.4 SVDS=10V, ID=1A Input capacitance Ciss 350 pF VDS=10V Output capacitance C 80 pF V =0V oss GS Reverse transfer capacitance Crss 50 pF f=1MHz Turn-on delay time td (on) 11 ns VDD 15V ID=1A Rise time tr 11 ns VGS=10V Turn-off delay time t 35 ns d (off) RL=15 Fall time tf 11 ns RG =10 Total gate charge Qg 3.9 nC VDD 15V VGS=5V I =2A Gate-source charge Q 1.3 nC D gs RL=7.5 RG =10 Gate-drain charge Qgd 1.1 nC Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit Forward voltage VSD 1.2 V IS=0.8A, VGS=0V 20190527-Rev.C 2/4