X-On Electronics has gained recognition as a prominent supplier of RSQ015P10TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSQ015P10TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSQ015P10TR ROHM

RSQ015P10TR electronic component of ROHM
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See Product Specifications
Part No.RSQ015P10TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET 4V Drive Pch MOSFET
Datasheet: RSQ015P10TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6726 ea
Line Total: USD 0.67 
Availability - 256
Ship by Wed. 01 Jan to Mon. 06 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
256
Ship by Wed. 01 Jan to Mon. 06 Jan
MOQ : 1
Multiples : 1
1 : USD 0.6726
10 : USD 0.56
30 : USD 0.5026
100 : USD 0.4472
500 : USD 0.3549
1000 : USD 0.3382

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSQ015P10TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSQ015P10TR and other electronic components in the MOSFETs category and beyond.

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RSQ015P10 Pch -100V -1.5A Power MOSFET Data Sheet l Outline (6) V -100V DSS TSMT6 (5) (4) R (Max.) 470mW DS(on) I -1.5A (1) D (2) P 1.25W D (3) l l Features Inner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking ZN lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V -100 DSS *1 Continuous drain current I 1.5 A D *2 Pulsed drain current A I 6.0 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.25 W D Power dissipation *4 0.6 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.C 1/11Data Sheet RSQ015P10 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 100 C/W thJA Thermal resistance, junction - ambient *4 R - - 208 C/W thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -100 - - V (BR)DSS GS D voltage V Breakdown voltage I = -1mA (BR)DSS D - -109 - mV/C temperature coefficient T referenced to 25C j I V = -100V, V = 0V Zero gate voltage drain current - - -1 mA DSS DS GS Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = -10V, I = -1mA Gate threshold voltage -1.0 - -2.5 V GS (th) DS D V I = -1mA Gate threshold voltage (GS)th D - 3.2 - mV/C temperature coefficient T referenced to 25C j V = -10V, I = -1.5A - 350 470 GS D V = -4.5V, I = -0.75A - 380 510 GS D Static drain - source *5 R mW DS(on) on - state resistance V = -4.0V, I = -0.75A - 400 540 GS D V = -10V, I = -1.5A, T =125C - 610 850 GS D j R Gate input resistannce f = 1MHz, open drain - 8.5 - W G *5 Transconductance V = -10V, I = -1.5A 1.5 4.0 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.C 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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