RSS065N06 Transistors 4V Drive Nch MOSFET RSS065N06 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 z Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). z Application Each lead has same dimensions Switching z Packaging specifications z Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 RSS065N06 2 (1) (2) (3) (4) 1 (1)Source (2)Source (3)Source (4)Gate (5)Drain (1) (2) (3) (4) (6)Drain (7)Drain 1 ESD PROTECTION DIODE (8)Drain 2 BODY DIODE A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage V 20 V GSS Continuous ID 6.5 A Drain current 1 Pulsed IDP 26 A Source current Continuous I 1.6 A S 1 (Body diode) Pulsed ISP 26 A 2 Total power dissipatino PD 2.0 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board. z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-A) 62.5 C / W Mounted on a ceramic board. 1/4 RSS065N06 Transistors z Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V(BR) DSS 60 VID=1mA, VGS=0V Zero gate voltage drain current IDSS 1 AVDS=60V, VGS=0V Gate threshold voltage V 1.0 2.5 V V =10V, I =1mA GS (th) DS D 24 37 ID=6.5A, VGS=10V Static drain-source on-state RDS (on) 28 44 m ID=6.5A, VGS=4.5V resistance 31 48 I =6.5A, V =4.0V D GS Forward transfer admittance Yfs 4 SID=6.5A, VDS=10V Input capacitance Ciss 900 pF VDS=10V Output capacitance C 200 pF V =0V oss GS Reverse transfer capacitance Crss 100 pF f=1MHz Turn-on delay time td (on) 13 ns ID=3.3A, VDD 30V Rise time tr 25 ns V =10V GS Turn-off delay time td (off) 60 ns RL=9.1 Fall time tf 20 ns RG=10 Total gate charge Q 11 16 nC g ID=6.5A, VDD 30V Gate-source charge Qgs 2 nC VGS=5V RL=4.6, RG=10 Gate-drain charge Qgd4 nC Pulsed z Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=1.6A, VGS=0V Pulsed 2/4