RSS070N05FRA Datasheet Nch 45V 7A Power MOSFET llOutline V 45V DSS R (Max.) 25m DS(on) SOP8 I 7.0A D P 2.0W D llInner circuit llFeatures 1) Low on-resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RSS070N05 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS I Continuous drain current 7.0 A D *1 I Pulsed drain current 28 A DP V Gate - Source voltage 20 V GSS *2 P 2.0 W D Power dissipation *3 P 1.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20161213 - Rev.001 RSS070N05FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 /W thJA Thermal resistance, junction - ambient *3 R - - 89.2 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 7A - 18 25 GS D Static drain - source *4 R V = 4.5V, I = 7A - 23 32 m DS(on) GS D on - state resistance V = 4.0V, I = 7A - 25 35 GS D R Gate resistance f = 1MHz, open drain - 3.2 - G Forward Transfer *4 Y V = 10V, I = 7A 6.0 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20161213 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.