TM Polar2 V = 500V IXTP450P2 DSS I = 16A Power MOSFETs IXTQ450P2 D25 R 330m DS(on) IXTH450P2 t = 400ns N-Channel Enhancement Mode rr(typ) Avalanche Rated Fast Intrinsic Diode TO-220AB (IXTP) G D Tab S TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS G V Continuous 30 V GSS D V Transient 40 V GSM S Tab I T = 25C16A D25 C I T = 25C, Pulse Width Limited by T 48 A TO-247(IXTH) DM C JM T = 25C16A I A C E T = 25C 750 mJ AS C dv/dt I I , V V ,T 150C 10 V/ns S DM DD DSS J G P T = 25C 300 W D C D Tab S T -55 ... +150 C J T 150 C JM G = Gate D = Drain T -55 ... +150 C stg S = Source Tab = Drain T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD Features M Mounting Torque 1.13/10 Nm/lb.in. d z Avalanche Rated Weight TO-220 3.0 g z Fast Intrinsic Diode TO-3P 5.5 g z Dynamic dv/dt Rated TO-247 6.0 g z Low Package Inductance Advantages z High Power Density Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Space Savings BV V = 0V, I = 250A 500 V DSS GS D V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS z Switch-Mode and Resonant-Mode I V = V , V = 0V 5 A DSS DS DSS GS Power Supplies T = 125C 25 A z J DC-DC Converters z Laser Drivers R V = 10V, I = 0.5 I , Note 1 330 m DS(on) GS D D25 z AC and DC Motor Drives z Robotics and Servo Controls 2011 IXYS CORPORATION, All Rights Reserved DS100241A(10/11)IXTP450P2 IXTQ450P2 IXTH450P2 Symbol Test Conditions Characteristic Values TO-3P Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 12 20 S fs DS D D25 C 2280 pF iss C V = 0V, V = 25V, f = 1MHz 257 pF oss GS DS C 30 pF rss t 16 ns d(on) Resistive Switching Times t 10 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 50 ns d(off) R = 10 (External) G t 18 ns f Q 43 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 18 nC gs GS DS DSS D D25 Q 11 nC gd R 0.42 C/W thJC R TO-220 0.50 C/W thCS R TO-3P & TO-247 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 16 A S GS TO-247 Outline I Repetitive, Pulse Width Limited by T 64 A SM JM V I = I , V = 0V, Note 1 1.3 V SD F S GS I = 16A, -di/dt = 100A/s t 400 ns F rr P V = 100V, V = 0V R GS 1 2 3 Note 1. Pulse test, t 300s, duty cycle, d 2%. e Terminals: 1 - Gate 2 - Drain 3 - Source TO-220 Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 1 - Gate 2 - Drain L1 4.50 .177 3 - Source P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537