DMN62D0UT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance: R DS(ON) I max D Low Gate Threshold Voltage BV R max DSS DS(ON) T = +25C A Low Input Capacitance 2 V = 4.5V GS Fast Switching Speed 60V 320mA 2.5 V = 2.5V Low Input/Output Leakage GS ESD Protected Up To 1kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance Qualified to AEC-Q101 Standards for High Reliability (R ) and yet maintain superior switching performance, making DS(ON) it ideal for high-efficiency power management applications. Mechanical Data Applications Case: SOT523 Case Material: Molded Plastic, Green Molding Compound. Motor Control UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (Approximate) SOT523 D D G G S Gate Protection S Diode Top View Top View Equivalent Circuit Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging DMN62D0UT-7 SOT523 3,000/Tape & Reel DMN62D0UT-13 SOT523 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN62D0UT Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 320 A Continuous Drain Current (Note 6) V = 4.5V I mA GS D State 260 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 0.4 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) 1.2 A I DM Thermal Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 230 mW D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 546 C/W JA Total Power Dissipation (Note 6) 340 mW PD Thermal Resistance, Junction to Ambient (Note 6) Steady State 377 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 60V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 1.0 V V = 10V, I = 250A GS(TH) DS D V = 4.5V, I = 0.1A GS D 1.2 2.0 Static Drain-Source On-Resistance 1.4 2.5 R V = 2.5V, I = 0.05A DS(ON) GS D 1.8 3.0 V = 1.8V, I = 0.05A GS D Forward Transconductance 1.8 S Y V =10V, I = 0.2A fs DS D Diode Forward Voltage 0.8 1.3 V V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 32 pF iss V = 30V, V = 0V DS GS Output Capacitance C 3.9 pF oss f = 1.0MHz Reverse Transfer Capacitance C 2.4 pF rss Gate Resistance R 101 f = 1MHz , V = 0V, V = 0V g GS DS Total Gate Charge Q 0.5 nC g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q 0.09 nC gs I = 250mA D Gate-Drain Charge 0.09 nC Q gd Turn-On Delay Time 2.4 ns t D(ON) Turn-On Rise Time 2.5 ns t V = 30V, V = 10V, R DD GS Turn-Off Delay Time 22.6 ns t RG = 25, ID = 200mA D(OFF) Turn-Off Fall Time t 12.5 ns F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN62D0UT August 2016 Diodes Incorporated www.diodes.com Document number: DS38186 Rev. 3 - 2