X-On Electronics has gained recognition as a prominent supplier of RSU002N06T106 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSU002N06T106 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSU002N06T106 ROHM

RSU002N06T106 electronic component of ROHM
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Part No.RSU002N06T106
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Trans MOSFET N-CH 60V 0.25A
Datasheet: RSU002N06T106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1851 ea
Line Total: USD 0.19 
Availability - 3132
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3132
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1851
10 : USD 0.1288
100 : USD 0.0667
1000 : USD 0.061
3000 : USD 0.0483
9000 : USD 0.0414
24000 : USD 0.0414
45000 : USD 0.0391
99000 : USD 0.038

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSU002N06T106 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSU002N06T106 and other electronic components in the MOSFETs category and beyond.

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2.5V Drive Nch MOSFET RSU002N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET UMT3 (SC-70) <SOT-323> Features 1) High speed switing. 2) Small package(UMT3). 3) Low voltage drive(2.5V drive). Application Switching Abbreviated symbol : RK Packaging specifications Inner circuit (3) Package Taping Type Code T106 Basic ordering unit (pieces) 3000 RSU002N06 2 (2) 1 (1) (1) SOURCE (2) GATE 1 ESD PROTECTION DIODE (3) DRAIN 2 BODY DIODE Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 V GSS Continuous I 250 mA D Drain current *1 Pulsed I 1A DP Continuous I 150 mA Source current S *1 (Body Diode) Pulsed I 1A SP *2 Power dissipation P 200 mW D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw 10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Thermal resistance Parameter Symbol Limits Unit * Channel to ambient Rth (ch-a) 625 C / W * Each terminal mounted on a recommended land. www.rohm.com 2010.04 - Rev.A 1/5 c 2010 ROHM Co., Ltd. All rights reserved. RSU002N06 Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 60 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =60V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.3 V V =10V, I =1mA GS (th) DS D -1.7 2.4 I =250mA, V =10V D GS Static drain-source on-state -2.1 3.0 I =250mA, V =4.5V D GS ** R DS (on) resistance -2.3 3.2 I =250mA, V =4.0V D GS - 3.0 12.0 I =10mA, V =2.5V D GS ** Forward transfer admittance l Y l 0.25 - - S I =250mA, V =10V fs D DS Input capacitance C -15 - pFV =25V iss DS Output capacitance C -4.5 - pFV =0V oss GS Reverse transfer capacitance C -2.0 - pFf=1MHz rss I =100mA, V 30V Turn-on delay time t *** -3.5 - ns D DD d(on) Rise time t *** -5 - nsV =10V r GS Turn-off delay time t ** -18 - nsR 300 d(off) L Fall time t *** -28 - nsR =10 f G *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward voltage V -- 1.2 VI =250mA, V =0V SD s GS *Pulsed www.rohm.com 2010.04 - Rev.A 2/5 c 2010 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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