RSX051VA-30TR ROHM

Data Sheet Schottky barrier Diode RSX051VA-30 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification. 0.170.1 1.1 0.05 1.30.05 Features 1) Small mold type. (TUMD2) 2) Low VF 3) High reliability. TUMD2 Construction Silicon epitaxial planar Structure 0.80.05 0.60.2 0.1 ROHM : TUMD2 dot (year week factory) + day Taping specifications (Unit : mm) 1.550.1 0.250.05 2.00.05 4.00.1 0 1.430.05 4.00.1 1.00.2 0 0.90.08 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit V Reverse voltage (repetitive peak) 30 V RM Reverse voltage (DC) V 30 V R Average rectified forward current 500 Io mA Forward current surge peak (60Hz1cyc) I 5 A FSM Junction temperature Tj 150 C Storage temperature Tstg 40 to 150 C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V Forward voltage - 0.35 0.39 V I =500mA F F Reverse current I - 40 200 A V =30V R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.C 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 0.8 0.5 2.0RSX051VA-30 Data Sheet 1000 1000 1000000 Ta=150 Ta=150 f=1MHz 100000 Ta=125 Ta=125 10000 100 100 Ta=75 1000 Ta=75 Ta=25 Ta=25 100 10 10 Ta=-25 10 Ta=-25 1 0.1 1 1 0 5 10 15 20 25 30 0 102030 0 100 200 300 400 500 600 REVERSE VOLTAGE:VR(V) FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) VR-Ct CHARACTERISTICS VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS 380 300 200 Ta=25 Ta=25 Ta=25 190 IF=0.5A VR=30V f=1MHz 250 370 n=30pcs n=30pcs 180 VR=0V n=10pcs 170 200 360 160 150 150 350 140 100 130 AVE:36.59uA 340 120 50 AVE:159.7pF AVE:354.8mV 110 330 0 100 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 30 30 30 Ta=25 25 Ifsm 1cyc IF=0.5A 25 Ifsm 25 IR=1A Irr=0.25*IR 8.3ms 8.3ms 8.3ms 20 20 20 n=10pcs 1cyc 15 15 15 10 10 10 5 5 5 AVE:15.6A AVE:10.4ns 0 0 0 1 10 100 NUMBER OF CYCLES trr DISPERSION MAP IFSM DISRESION MAP IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 0.5 30 1000 IM=10mA IF=0.2A 25 Ifsm 0.4 t time 1ms Rth(j-a) 20 300us 0.3 D=1/2 DC 15 100 Rth(j-c) Sin(180) 0.2 10 0.1 5 0 0 10 0 0.2 0.4 0.6 0.8 1 1 10 100 0.001 0.1 10 1000 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.C PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) TRANSIENT REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:IR(uA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD POWER TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)