RSX101M-30TFTR ROHM

Data Sheet Schottky Barrier Diode RSX101M-30 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 0.10.1 0.05 1.60.1 1.2 Features 1)Small power mold type. (PMDU) 2)Low V , Low I F R 3)High reliability PMDU Construction Silicon epitaxial Structure 0.90.1 0.80.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 0.250.05 1.550.05 2.00.05 4.00.1 1.810.1 4.00.1 1.00.1 1.5MAX Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 30 V RM V Reverse voltage (DC) 30 V R Average rectified forward current Io 1 A Forward current surge peak (60Hz1cyc) I 45 A FSM Junction temperature 150 Tj C Storage temperature Tstg 40 to 150 C (*1)Mounting on epoxi board. 180Half sine wave Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit V Forward voltage - 0.35 0.39 V I =1A F F I Reverse current - 90 200 AV =30V R R Capacitance between terminals Ct - 60.0 - pF V =10V , f=1MHz R ESD breakdown voltage ESD - 12.0 - kV C=200pF ,R=0 www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.C 2.60.1 3.50.2 3.50.05 1.750.1 0.85 8.00.2 3.710.1 3.05RSX101M-30 Data Sheet 1 1000 1000000 Ta=150 Ta=125 f=1MHz 100000 Ta=125 Ta=75 Ta=150 10000 0.1 100 Ta=25 Ta=75 1000 Ta=-25 Ta=25 100 10 0.01 10 Ta=-25 1 1 0.001 0.1 0 100 200 300 400 500 0 5 10 15 20 25 30 0 5 10 15 20 25 30 FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 350 1000 380 Ta=25 Ta=25 Ta=25 340 900 IF=1A f=1MHz VR=30V 330 370 n=30pcs 800 VR=0V n=30pcs n=10pcs 320 700 360 310 600 300 500 350 290 400 300 280 AVE:103.1uA 340 200 270 AVE:300.1pF AVE:349.9mV 100 260 330 0 250 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 30 100 Ta=25 90 25 IF=0.5A Ifsm 80 1cyc IR=1A 150 Ifsm Irr=0.25*IR 70 8.3ms 8.3ms 20 8.3ms n=10pcs 1cyc 60 50 100 15 40 10 30 50 20 AVE:66.0A 5 AVE:8.30ns 10 0 0 0 110 100 trr DISPERSION MAP NUMBER OF CYCLES IFSM DISPERSION MAP IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 1000 100 1 IM=10mA IF=0.5A 90 Rth(j-a) Ifsm 80 1ms time 0.8 100 t 70 300us D=1/2 60 Rth(j-c) 0.6 10 50 Sin(180) DC 0.4 40 30 1 0.2 20 10 0 0 0.1 0 0.511.5 2 1 10 100 0.001 0.01 0.1 1 10 100 1000 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) FORWARD CURRENTIo(A) IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.C PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(uA) TRANSIENT REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:IR(uA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD POWER TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)